- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379326 > MRF8372R1 (MOTOROLA INC) RF LOW POWER TRANSISTOR NPN SILICON PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF8372R1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | RF LOW POWER TRANSISTOR NPN SILICON |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 101K |
| 代理商： | MRF8372R1 |
MRF8372R1, R2
4
MOTOROLA RF DEVICE DATA
f
Zin
Ohms
ZOL*
Ohms
VCC = 7.5 V
VCC = 12.5 V
VCC = 7.5 V
VCC = 12.5 V
Frequency
MHz
Pin = 150 mW
8.0 + j1.9
Pin = 100 mW
4.0 + j1.2
Pout = 806 MHz = 820 mW
Pout = 870 MHz = 635 mW
Pout = 960 MHz = 530 mW
Pout = 806 MHz = 1.05 mW
Pout = 870 MHz = 855 mW
Pout = 960 MHz = 580 mW
806
24.7 – j19.2
20.9 – j31.0
870
5.2 + j3.5
6.0 + j1.9
36.9 – j20.5
32.1 – j26.6
960
6.8 + j4.0
6.1 + j2.5
39.3 – j18.5
36.3 – j25.7
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency.
Table 1. Series Equivalent Input/Output Impedance
TYPICAL CHARACTERISTICS
800/900 MHz BAND DATA (continued)
Figure 3. Output Power versus Input Power
f = 870 MHz
Figure 4. Output Power versus Frequency
VCC = 7.5 Vdc
Figure 5. Output Power versus Collector Voltage
Figure 6. Output Power versus Frequency
P
o
1200
900
600
300
06
8
10
12
14
16
VCC, COLLECTOR VOLTAGE (Vdc)
VCC = 12.5 Vdc
7.5 Vdc
100 mW
Pin = 150 mW
50 mW
100 mW
Pin = 150 mW
50 mW
100 mW
Pin = 150 mW
50 mW
o
1000
500
0
800
820
840
860
f, FREQUENCY (MHz)
880
900
920
940
960
P
o
1600
800
400
0
800
820
840
860
f, FREQUENCY (MHz)
880
900
920
940
960
1200
o
1200
900
600
300
00
30
60
90
120
150
Pin, INPUT POWER (mW)
15
45
75
105
135
f = 870 MHz
VCC = 12.5 Vdc
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF8372R2 | Half pitch, Ribbon cable IDC connection; HRS No: 572-0628-1 00; No. of Positions: 100; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.27; Terminal Pitch (mm): 2.54; Termination Style: IDC; Current Rating(Amps)(Max.): 0.5; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -55 to 85; General Description: Housing; Cable connector with lock |
| MRF8372 | RF LOW POWER TRANSISTOR NPN SILICON |
| MRF848 | RF POWER TRANSISTOR |
| MRF894 | CAP 680PF 250VAC B X1Y2 RAD |
| MRF9745T1 | HIGH FREQUENCY POWER TRANSISTOR LDMOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8372R2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF837G | 制造商:Microsemi Corporation 功能描述:MRF837G - Bulk |
| MRF837GT | 制造商:Microsemi Corporation 功能描述:MRF837GT - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF837T | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF838A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。