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參數(shù)資料
| 型號： | MRF21060 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 550K |
| 代理商： | MRF21060 |
5
MRF21060R3 MRF21060SR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
,
η
Gp
A
Figure 3. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
5
0
2080
2120
15
Figure 4. W-CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
10
P
out
, OUTPUT POWER (WATTS Avg.) WCDMA
45
20
2100
2180
35
2
40
Figure 5. Intermodulation Distortion
versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
65
Figure 6. Intermodulation Distortion Products
versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
100
1.0
0.1
0.1
12
14
V
DD
= 28 Vdc
P
out
= 60 W (PEP), I
DQ
= 500 mA
TwoTone Measurement, 100 kHz Tone Spacing
40
55
45
35
1.0
5
15
30
10
25
20
10
11
2140
2160
6
14
100
10
0.1
10
2200
1.0
100
30
35
35
0
10
25
20
η
IRL
IMD
10
30
40
3rd Order
5th Order
7th Order
25
60
50
40
30
80
20
50
70
60
40
30
13
I
I
,
η
Gp
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
V
DD
, DRAIN VOLTAGE (VOLTS)
32
24
13
14
I
28
22
12.5
12
13.5
15
25
60
25
35
50
55
20
30
45
40
16
ACPR
V
DD
= 28 Vdc
I
DQ
= 700 mA, f = 2140 MHz, Channel Spacing
(Channel Bandwidth): 5 MHz @ 4.096 MHz BW
15 DTCH
I
10
900 mA
700 mA
500 mA
V
DD
= 28 Vdc
f = 2140 MHz
TwoTone Measurement, 100 kHz Tone Spacing
I
V
DD
= 28 Vdc
I
DQ
= 700 mA, f = 2140 MHz
TwoTone Measurement, 100 kHz Tone Spacing
Gp
900 mA
700 mA
500 mA
V
DD
= 28 Vdc
f = 2140 MHz
TwoTone Measurement, 100 kHz Tone Spacing
Gp
38
24
28
34
36
22
26
32
30
26
30
G
ps
η
G
ps
G
ps
IMD
12
4
8
P
out
= 60 W (PEP), I
DQ
= 500 mA
f = 2140 MHz
TwoTone Measurement,
100 kHz Tone Spacing
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF21060R3 | RF Power Field Effect Transistors |
| MRF21060SR3 | RF Power Field Effect Transistors |
| MRF316 | BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF317 | BROADBAND RF POWER TRANSISTOR NPN SILICON |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21060LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF21060S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF21060SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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