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參數(shù)資料
| 型號(hào)： | MRF19090 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880, CASE 465B-03, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 300K |
| 代理商： | MRF19090 |
MRF19090 MRF19090S MRF19090SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
–
Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μ
A)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Gate
–
Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
g
fs
—
7.2
—
S
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μ
Adc)
VGS
(th)
2.0
—
4.0
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 750 mAdc)
V
GS(Q)
2.5
3.8
4.5
Vdc
Drain
–
Source On
–
Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
—
0.10
—
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
4.2
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Two
–
Tone Common
–
Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
G
ps
10
11.5
—
dB
Two
–
Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
33
35
—
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
—
–
30
–
28
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
—
–
12
—
dB
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 90 W CW, f = 1990 MHz)
P1dB
—
90
—
W
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 750 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19090R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF19090SR3 | 功能描述:IC MOSFET RF N-CHAN NI-880S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19120 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19120S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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