參數(shù)資料
型號: MRF176GV
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: N-CHANNEL MOS BROADBAND RF POWER FETs
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù): 3/10頁
文件大?。?/td> 177K
代理商: MRF176GV
3
MRF176GU MRF176GV
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL CHARACTERISTICS — MRF176GU
(1)
(Figure 2)
Common Source Power Gain
(VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)
Gps
12
14
dB
Drain Efficiency
(VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)
η
45
50
%
Electrical Ruggedness
(VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTE:
1. Measured in push–pull configuration.
Figure 2. 400 MHz Test Circuit
B1 — Balun, 50
Semirigid Coax .086 OD 2
Long
B2 — Balun, 50
Semirigid Coax .141 OD 2
Long
C1, C2, C9, C10 — 270 pF ATC Chip Capacitor
C3 — 15 pF ATC Chip Cap
C4, C8 — 1.0–20 pF Piston Trimmer Cap
C5 — 27 pF ATC Chip Cap
C6, C7 — 22 pF Mini Unelco Capacitor
C11, C13, C14, C15, C16 — 0.01
μ
F Ceramic Capacitor
C12 — 1.0
μ
F 50 V Tantalum Cap
C17, C18 — 680 pF Feedthru Capacitor
C19 — 10
μ
F 100 V Tantalum Cap
L1, L2 — Hairpin Inductor #18 W
L3, L4 — Hairpin Inductor #18 W
L5, L6 — 13T #18 W .250 ID
L7 — Ferroxcube VK–200 20/4B
L8 — 3T #18 W .340 ID
R1 — 1.0 k
1/4 W Resistor
R2, R3 — 10 k
1/4 W Resistor
Z1, Z2 — Microstrip Line .400L x .250W
Z3, Z4 — Microstrip Line .450L x .250W
Ckt Board Material — .060
teflon–fiberglass, copper clad both sides, 2 oz. copper,
ε
r = 2.55
.200
.400
.200
.200
C11
C12
R1
C13
C15
R2
A
B
C17
L7
C18
L8
C19
50 V
L1
L2
C1
C2
B1
B2
Z1
Z2
C3
C4
R3
D.U.T.
A
B
C14
C16
L6
Z4
Z3
L3
L4
C10
C9
C5
C6
C7
C8
BIAS
相關(guān)PDF資料
PDF描述
MRF177 N-CHANNEL BROADBAND RF POWER MOSFET
MRF182 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF182S LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF183 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF183S LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF177 功能描述:射頻MOSFET電源晶體管 5-400MHz 100Watts 28Volt Gain 12dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF18030A 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF18030ALR3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF18030ALSR3 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF18030ALSR5 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR