參數(shù)資料
型號： MRF176GV
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： N-CHANNEL MOS BROADBAND RF POWER FETs
中文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù)： 2/10頁
文件大?。?/td> 177K
代理商： MRF176GV
MRF176GU MRF176GV
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A)
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
DYNAMIC CHARACTERISTICS
(1)
VGS(th)
VDS(on)
gfs
1.0
3.0
6.0
Vdc
1.0
3.0
5.0
Vdc
2.0
3.0
—
mhos
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS — MRF176GV
(2)
(Figure 1)
Ciss
Coss
Crss
—
180
—
pF
—
100
—
pF
—
6.0
—
pF
Common Source Power Gain
(VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
Gps
15
17
—
dB
Drain Efficiency
(VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
η
50
55
—
%
Electrical Ruggedness
(VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
Figure 1. 225 MHz Test Circuit
C1 — Arco 404, 8.0–60 pF
C2, C3, C6, C8 — 1000 pF Chip
C4, C9 — 0.1
μ
F Chip
C5 — 180 pF Chip
C7 — Arco 403, 3.0–35 pF
C10 — 0.47
μ
F Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enameled Wire,
L1 —
Close Wound, 1/4
″
I.D.
Board material — .062
″
fiberglass (G10),
Two sided, 1 oz. copper,
ε
r
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent
5
L2 — Ferrite Beads of Suitable Material
L2 —
for 1.5–2.0
μ
H, Total Inductance
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhms, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 —
Can Be Made of 25 Ohm Semirigid
T1 —
Co–Ax, 47–62 Mils O.D.
T2 — 1:4 Impedance Ratio RF Transformer.
T2 —
Can Be Made of 25 Ohm Semirigid
T2 —
Co–Ax, 62–90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE:
with ferrite toroids or beads to increase the common
NOTE:
mode inductance. For operation below 100 MHz. The
NOTE:
same is required for the output transformer.
BIAS 0–6 V
R1
C3
C4
R2
C1
C2
T1
C5
D.U.T.
T2
C6
C7
50 V
–
+
C10
C9
C8
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