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參數(shù)資料
| 型號(hào)： | MRF175GU |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | N-CHANNEL MOS BROADBAND RF POWER FETs |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | MRF175GU |
7
MRF175GU MRF175GV
MOTOROLA RF DEVICE DATA
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating
— Never exceed the gate voltage
rating (or any of the maximum ratings on the front page). Ex-
ceeding the rated VGS can result in permanent damage to
the oxide layer in the gate region.
Gate Termination
— The gates of this device are essen-
tially capacitors. Circuits that leave the gate open–circuited
or floating should be avoided. These conditions can result in
turn–on of the devices due to voltage build–up on the input
capacitor due to leakage currents or pickup.
Gate Protection
— These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate–to–source impedance
low also helps damp transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate–drain capacitance. If the
gate–to–source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate–threshold voltage
and turn the device on.
HANDLING CONSIDERATIONS
When shipping, the devices should be transported only in
antistatic bags or conductive foam. Upon removal from the
packaging, careful handling procedures should be adhered
to. Those handling the devices should wear grounding straps
and devices not in the antistatic packaging should be kept in
metal tote bins. MOSFETs should be handled by the case
and not by the leads, and when testing the device, all leads
should make good electrical contact before voltage is ap-
plied. As a final note, when placing the FET into the system it
is designed for, soldering should be done with grounded
equipment.
DESIGN CONSIDERATIONS
The MRF175G is a RF power N–channel enhancement
mode field–effect transistor (FETs) designed for HF, VHF and
UHF power amplifier applications. Motorola RF MOSFETs
feature a vertical structure with a planar design.
Motorola Application Note AN211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
The major advantages of RF power FETs include high
gain, low noise, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control sig-
nal.
DC BIAS
The MRF175G is an enhancement mode FET and, there-
fore, does not conduct when drain voltage is applied. Drain
current flows when a positive voltage is applied to the gate.
RF power FETs require forward bias for optimum perfor-
mance. The value of quiescent drain current (IDQ) is not criti-
cal for many applications. The MRF175G was characterized
at IDQ = 100 mA, each side, which is the suggested minimum
value of IDQ. For special applications such as linear amplifi-
cation, IDQ may have to be selected to optimize the critical
parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may be just a simple resistive divid-
er network. Some applications may require a more elaborate
bias sytem.
GAIN CONTROL
Power output of the MRF176 may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual
gain control, AGC/ALC and modulation systems.
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| MRF175GV | N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF175LU | N-CHANNEL BROADBAND RF POWER FETs |
| MRF175LV | N-CHANNEL BROADBAND RF POWER FETs |
| MRF176GU | N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF176 | N-CHANNEL MOS BROADBAND RF POWER FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF175GU1111 | 制造商:MA-COM 制造商全稱(chēng):M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF175GV | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 26A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF175LU | 功能描述:射頻MOSFET電源晶體管 400MHz 28Volt 100W Gain 10dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF175LV | 制造商:MA-COM 制造商全稱(chēng):M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL BROADBAND RF POWER FETs |
| MRF176 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:N-CHANNEL MOS BROADBAND RF POWER FETs |
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