參數(shù)資料
型號： MRF157
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： MOS LINEAR RF POWER FET
中文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE 368-03, 2 PIN
文件頁數(shù)： 2/8頁
文件大小： 178K
代理商： MRF157
MRF157
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
ON CHARACTERISTICS
V(BR)DSS
IDSS
IGSS
125
—
—
Vdc
—
—
20
mAdc
—
—
5.0
μ
Adc
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 40 A)
Forward Transconductance (VDS = 10 V, ID = 20 A)
DYNAMIC CHARACTERISTICS
VGS(th)
VDS(on)
gfs
1.0
3.0
5.0
Vdc
1.0
3.0
5.0
Vdc
16
24
—
mhos
Input Capacitance
(VDS = 50 V, VGS = 0 V, f = 1.0 MHz)
Ciss
—
1800
—
pF
Output Capacitance
(VDS = 50 V, VGS = 0, f = 1.0 MHz)
Coss
—
750
—
pF
Reverse Transfer Capacitance
(VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
—
75
—
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)
Gps
15
21
—
dB
Drain Efficiency
(VDD = 50 V, Pout = 600 W, f = 30 MHz, IDQ = 800 mA)
h
40
45
—
%
Intermodulation Distortion
(VDD = 50 V, Pout = 600 W(PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 800 mA)
IMD(d3)
—
–25
—
dB
Figure 1. 30 MHz Test Circuit
C1, C3, C8 — Arco 469
C2 — 330 pF
C4 — 680 pF
C5, C19, C20 — 0.47
μ
F, RMC Type 2225C
C6, C7, C14, C15, C16 — 0.1
μ
F
C9, C10, C11 — 470 pF
C12 — 1000 pF
C13 — Two Unencapsulated 1000 pF Mica, in Series
C17, C18 — 0.039
μ
F
C21 — 10
μ
F/100 V Electrolytic
L1 — 2 Turns #16 AWG, 1/2
″
ID, 3/8
″
Long
L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801
R1, R2 — 10 Ohms/2W Carbon
T1 — RF Transformer, 1:25 Impedance Ratio. See Motorola
T1 —
Application Note AN749, Figure 4 for details.
T1 —
Ferrite Material: 2 Each, Fair–Rite Products
T1 —
Corp. #2667540001
All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.
0–6 V
R1
C5
C6
R2
C4
L1
C1
C2
C3
C7
RF
INPUT
+
–
D.U.T.
C9
C10 C11 C12 C13
C14
C15 C16
C17 C18
C19
C8
T1
L2
L3
C20 C21
50 V
–
+
RF
OUTPUT
+
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