參數(shù)資料
型號(hào)： MRF140
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： N-CHANNEL MOS LINEAR RF POWER FET
中文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 163K
代理商： MRF140
MRF140
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0)
Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
V(BR)DSS
IDSS
IGSS
65
—
—
Vdc
—
—
5.0
mAdc
—
—
1.0
μ
Adc
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 10 Adc)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
DYNAMIC CHARACTERISTICS
VGS(th)
VDS(on)
gfs
1.0
3.0
5.0
Vdc
0.1
0.9
1.5
Vdc
4.0
7.0
—
mhos
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (SSB)
Ciss
Coss
Crss
—
450
—
pF
—
400
—
pF
—
75
—
pF
Common Source Amplifier Power Gain
(VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA)
(30 MHz)
(150 MHz)
Gps
—
—
15
6.0
—
—
dB
Drain Efficiency
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 6.5 A)
η
—
40
—
%
Intermodulation Distortion (1)
(VDD = 28 V, Pout = 150 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 250 mA)
IMD(d3)
IMD(d11)
ψ
—
—
–30
–60
—
—
dB
Load Mismatch
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
No Degradation in Output Power
C7
Figure 1. 30 MHz Test Circuit (Class AB)
C2, C5, C6, C7, C8, C9 — 0.1
μ
F Ceramic Chip or
Monolythic with Short Leads
C3 — Arco 469
C4 — 820 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10
μ
F/100 V Electrolytic
C11 — 1
μ
F, 50 V, Tantalum
C12 — 330 pF, Dipped Mica (Short leads)
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0
μ
H
L2 — Ferrite Bead(s), 2.0
μ
H
R1, R2 — 51
/1.0 W Carbon
R3 — 1.0
/1.0 W Carbon or Parallel Two 2
, 1/2 W Resistors
R4 — 1 k
/1/2 W Carbon
T1 — 16:1 Broadband Transformer
T2 — 1:25 Broadband Transformer
BIAS
0–12 V
+
–
C5
R1
C4
T2
C3
R2
R3
RF INPUT
L1
C8
T1
C6
C9
DUT
C10
28 V
–
+
RF
OUTPUT
L2
+
–
C2
C11
R4
C12
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF140MP 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF141 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF141G 功能描述:射頻MOSFET電源晶體管 5-175MHz 300Watts 28Volt Gain 12dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF141MP 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF1421C 制造商:New Japan Radio Co Ltd (NJR/JRC) 功能描述:
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