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參數(shù)資料
| 型號： | MRF1035MB |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | MICROWAVE POWER TRANSISTORS |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 101K |
| 代理商： | MRF1035MB |
MRF10350
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
65
—
—
Vdc
65
—
—
Vdc
3.5
—
—
Vdc
—
—
25
mAdc
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
FUNCTIONAL TESTS
hFE
20
—
—
—
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz)
GPB
8.5
9.0
—
dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz)
η
40
—
—
%
Load Mismatch
(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit
RF INPUT
RF OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C2
C3
C4
+
+
–
C1
L1
D.U.T.
C1 — 75 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1
μ
F
C4 — 100
μ
F, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8
″
ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030
″
ε
r = 2.55, 2 Oz. Copper
.083
.170
.838
.130
.395
.394
.616
.402
1.518 .571
.594 1.685
.589
.573
.094
.095
.364
.258.170
.278
.159
.803
.396
.083
.156
.382
.160
.100
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