- 您現在的位置：買賣IC網 > PDF目錄296593 > MMST2222A (LITE-ON SEMICONDUCTOR CORP) 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數資料
| 型號： | MMST2222A |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 285K |
| 代理商： | MMST2222A |
MMST2222A
NPN General Purpose Transistor
FEATURES
Ideal for Medium Power Amplification and
Switching
Complementary PNP Type available(MMST2907A)
MECHANICAL DATA
Case: SOT-323 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
600
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=10A,IE=0
VCBO
75
V
Collector-emitter breakdown voltage
IC=10mA,IB=0
VCEO
40
V
Emitter-base breakdown voltage
IE=10A,IC=0
VEBO
6
V
Collector-base cut-off current
VCB=70V,IE=0
ICBO
0.1
uA
Collector-emitter cut-off current
VCE=35V,VBE(off)=3V
ICEX
0.1
uA
Emitter-base cut-off current
VEB=3V,IC=0
IEBO
0.1
uA
VCE=10V,IC=0.1mA
hFE1
35
V
VCE=10V,IC=1mA
hFE2
50
V
VCE=10V,IC=10mA
hFE3
75
V
VCE=10V,IC=150mA
hFE4
100
300
V
VCE=10V,IC=500mA
hFE5
40
V
DC current gain
VCE=1V,IC=150mA
hFE6
35
V
IC=500mA,IB=50mA
VCE(sat)1
1
V
Collector-emitter saturation voltage
IC=150mA,IB=15mA
VCE(sat)2
0.3
V
IC=500mA,IB=50mA
VBE(sat)1
2
V
Base-emitter saturation voltage
IC=150mA,IB=15mA
VBE(sat)2
1.2
V
Transition frequency
VCE=2V,IC=20mA,
f=100MHz
fT
300
MHz
Output Capacitance
VCB=10V,IE=0,f=1MHz
Cob
8
pF
Delay time
Td
10
nS
Rise time
VCC=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA
Tr
25
nS
Storage time
Ts
225
nS
Fall time
VCC=30V, IC=150mA
IB1=-IB2=15mA
Tf
60
nS
REV.1, Oct-2010, KSNR18
相關PDF資料 |
PDF描述 |
|---|---|
| MN725-2500.0000 | VOLTAGE CONTROLLED CLOCK SAW OSCILLATOR, 2500 MHz |
| MO10.0000000M07007AG | CRYSTAL OSCILLATOR, SINE OUTPUT, 10 MHz |
| MO143F | 7 SEG NUMERIC DISPLAY, ORANGE, 10.92 mm |
| MY151A | 7 SEG NUMERIC DISPLAY, YELLOW, 12.7 mm |
| MO151A | 7 SEG NUMERIC DISPLAY, ORANGE, 12.7 mm |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMST2222A_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST2222A_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Plastic-Encapsulate Transistors |
| MMST2222A_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST2222A-7 | 功能描述:兩極晶體管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMST2222A-7-F | 功能描述:兩極晶體管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。