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參數(shù)資料
| 型號： | MJF18004 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221D-03, ISOLATED TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 422K |
| 代理商： | MJF18004 |
5
Motorola Bipolar Power Transistor Device Data
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
IC, COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
0
1800
IC, COLLECTOR CURRENT (AMPS)
t
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10
1000
4
2000
0
3500
3
hFE, FORCED GAIN
6
300
50
0
IC, COLLECTOR CURRENT (AMPS)
4
5
150
0
2000
0
12
15
250
100
2
2
5
ts
200
150
100
400
4
2
500
1000
1500
2500
t
t
0
3
4
1000
1500
2500
9
3500
500
1000
1500
2000
2500
0
2
3
t
4
5
0
2
3
t
1
3
5
0
3
5
500
3000
4
5
7
8
10
11
13
14
250
50
3000
1
1
1
1
3000
200
600
800
1200
1400
1600
0
200
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
IB(off) = IC/2
VCC = 300 V
PW = 20
μ
s
IC/IB = 10
IC/IB = 5
IC/IB = 5
IC/IB = 10
TJ = 25
°
C
TJ = 125
°
C
IB(off) = IC/2
VCC = 300 V
PW = 20
μ
s
IC/IB = 5
IC/IB = 10
TJ = 25
°
C
TJ = 125
°
C
TJ = 25
°
C
TJ = 125
°
C
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200
μ
H
TJ = 25
°
C
TJ = 125
°
C
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200
μ
H
IC = 2 A
IC = 1 A
TJ = 25
°
C
TJ = 125
°
C
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200
μ
H
tfi
tc
TJ = 25
°
C
TJ = 125
°
C
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200
μ
H
tc
tfi
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| MJF18006 | 制造商:Rochester Electronics LLC 功能描述: |
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| MJF18008 | 功能描述:兩極晶體管 - BJT 8A 450V 45W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF18008G | 功能描述:兩極晶體管 - BJT 8A 450V 45W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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