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參數(shù)資料
| 型號： | MJF18002 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | PLASTIC, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 254K |
| 代理商： | MJF18002 |
5
Motorola Bipolar Power Transistor Device Data
0.01
0.10
1.00
10.00
10
1000
60
80
100
120
140
160
180
5
6
7
8
9
10
11
14
15
0
20
20
0.2
0.4
0.6
0.8
1.0
40
60
60
TC, CASE TEMPERATURE (
°
C)
80
100
120
140
160
P
0
0.5
1.0
1.5
2.0
2.5
0
0
200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 16. Reverse Bias Switching Safe
Operating Area
400
600
800
1000
1200
50
70
90
110
130
150
170
190
210
230
250
5
5
6
6
7
7
8
8
9
9
10
11
11
12
13
14
14
15
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 15 is based
on TC = 25
°
C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC > 25
°
C. Second break-
down limitations do not derate the same as thermal limita-
tions. Allowable current at the voltages shown on Figure 15
may be found at any case temperature by using the appropri-
ate curve on Figure 17. TJ(pk) may be calculated from the
data in Figures 20 and 21. At any case temperatures, thermal
limitations will reduce the power that can be handled to val-
ues less the limitations imposed by second breakdown. For
inductive loads, high voltage and current must be sustained
simultaneously during turn–off with the base to emitter junc-
tion reverse biased. The safe level is specified as a reverse
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode.
t
T
I
I
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
5
6
7
8
9
10
11
12
13
14
15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
TJ = 25
°
C
TJ = 125
°
C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
IC = 1 A
hFE, FORCED GAIN
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
IC = 1 A
IC = 0.4 A
IC = 0.4 A
TJ = 25
°
C
TJ = 125
°
C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
1
μ
s
10
μ
s
50
μ
s
1 ms
5 ms
DC (MJE18002)
DC (MJF18002)
TC
≤
125
°
C
IC/IB
≥
4
LC = 500
μ
H
VBE(off) = 0.5 V
0 V
–1.5 V
Figure 17. Forward Bias Power Derating
SECOND
BREAKDOWN
DERATING
THERMAL
DERATING
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