參數(shù)資料
型號(hào)： MJF127
廠(chǎng)商： MOTOROLA INC
元件分類(lèi)： 功率晶體管
英文描述： COMPLEMENTARY SILICON POWER DARLINGTONS
中文描述： 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 5/8頁(yè)
文件大?。?/td> 267K
代理商： MJF127
5
Motorola Bipolar Power Transistor Device Data
V
θ
°
0.1
NPN
MJF122
PNP
MJF127
10–1
0
+0.4
–0.2 –0.4
–0.6
+0.6
+0.2
VBE, BASE–EMITTER VOLTAGE (VOLTS)
–0.8
–1
–1.2 –1.4
IC, COLLECTOR CURRENT (AMP)
0
*IC/IB
≤
hFE 3
– 5
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
– 0.4
,
I
μ
103
102
101
100
+0.2
+0.4 +0.6
TJ = 150
°
C
100
°
C
REVERSE
FORWARD
25
°
C
–0.2
VCE = 30 V
105
–0.6
+0.8
+1
+1.2 +1.4
104
,
I
μ
103
102
101
100
TJ = 150
°
C
100
°
C
REVERSE
FORWARD
25
°
C
VCE = 30 V
105
– 4
– 3
– 2
– 1
θ
VB FOR VBE
0.2
25
°
C to 150
°
C
*
θ
VC FOR VCE(sat)
IC, COLLECTOR CURRENT (AMP)
Figure 10. Typical “On” Voltages
Figure 11. Typical Temperature Coefficients
0.1
IC, COLLECTOR CURRENT (AMP)
2
1.5
V
3
2.5
1
0.5
0.2
0.5
5
0.3
1
0.7
3
10
IC, COLLECTOR CURRENT (AMP)
2
1.5
V
3
2.5
1
0.5
TJ = 25
°
C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4 V
TJ = 25
°
C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4 V
VCE(sat) @ IC/IB = 250
θ
°
7
2
0.1
0.2
0.5
5
0.3
1
0.7
3
10
7
2
0.5
5
0.3
1
0.7
3
10
7
2
0.1
0.2
0.5
5
0.3
1
3
10
7
2
+ 1
+ 2
+ 3
+ 4
+ 5
0
– 5
– 4
– 3
– 2
– 1
+ 1
+ 2
+ 3
+ 4
+ 5
– 55
°
C to 25
°
C
*IC/IB
≤
hFE 3
θ
VB FOR VBE
*
θ
VC FOR VCE(sat)
Figure 12. Typical Collector Cut–Off Region
VCE(sat) @ IC/IB = 250
25
°
C to 150
°
C
– 55
°
C to 25
°
C
25
°
C to 150
°
C
– 55
°
C to 25
°
C
25
°
C to 150
°
C
– 55
°
C to 25
°
C
相關(guān)PDF資料
PDF描述
MJE122 Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:2; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight
MJE127 Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight; Circular Contact Gender:Pin
MJF122 COMPLEMENTARY SILICON POWER DARLINGTONS
MJF15030 COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS
MJF15030 COMPLEMENTARY SILICON POWER TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJF127G 功能描述:達(dá)林頓晶體管 5A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJF13007 制造商:SAVANTIC 制造商全稱(chēng):Savantic, Inc. 功能描述:Silicon NPN Power Transistors
MJF13009 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
MJF15030 功能描述:兩極晶體管 - BJT 8A 150V 36W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJF15030_06 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS
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