參數(shù)資料
型號: MJE18002
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: POWER TRANSISTOR
中文描述: 2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 3/10頁
文件大?。?/td> 254K
代理商: MJE18002
3
Motorola Bipolar Power Transistor Device Data
C
0
1
2
0.001
IB, BASE CURRENT (mA)
1.000
h
1
0.01
10
100
0.10
1.00
10.00
Figure 1. DC Current Gain @ 1 Volt
1
0.01
10
100
10.00
0.01
0.10
1.00
10.00
0.01
0.10
0.4
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1
10
100
1000
1
10
TYPICAL STATIC CHARACTERISTICS
TJ = 25
°
C
TJ = 125
°
C
IC/IB = 10
IC/IB = 5
h
V
V
V
0.10
1.00
IC, COLLECTOR CURRENT (AMPS)
VCE = 1 V
TJ = 125
°
C
TJ = 25
°
C
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 5 Volts
VCE = 5 V
TJ = 125
°
C
TJ = 25
°
C
TJ = –20
°
C
0.010
0.100
Figure 3. Collector Saturation Region
TJ = 25
°
C
IC = 0.2 A
0.4 A
1 A
1.5 A
2 A
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Collector–Emitter Saturation Voltage
IC/IB = 10
IC/IB = 5
1.00
10.00
0.10
1.00
10.00
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Base–Emitter Saturation Region
TJ = 25
°
C
TJ = 125
°
C
1
100
1000
VCE, COLLECTOR–EMITTER (VOLTS)
Figure 6. Capacitance
Cib
Cob
TJ = 25
°
C
f = 1 MHz
相關(guān)PDF資料
PDF描述
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