• 參數(shù)資料
    型號(hào)： MJE13007BS
    廠商： ON SEMICONDUCTOR
    元件分類： 功率晶體管
    英文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR
    封裝： PLASTIC, TO-220AB, 3 PIN
    文件頁(yè)數(shù)： 45/66頁(yè)
    文件大小： 462K
    代理商： MJE13007BS
    MJE13007 MJF13007
    3–671
    Motorola Bipolar Power Transistor Device Data
    r(t),
    TRANSIENT
    THERMAL
    RESIST
    ANCE
    (NORMALIZED)
    0.01
    0.02
    0.05
    0.1
    0.2
    0.5
    1
    2
    5
    10
    20
    50
    100 200
    t, TIME (msec)
    0.3
    3
    30
    300 500
    1K
    2K 3K 5K
    10K
    20K 30K 50K 100K
    Figure 10. Typical Thermal Response for MJF13007
    DUTY CYCLE, D = t1/t2
    t1
    R
    θJC(t) = r(t) RθJC
    R
    θJC = 3.12°C/W MAX
    D CURVES APPLY FOR POWER
    PULSE TRAIN SHOWN
    READ TIME AT t1
    TJ(pk) – TC = P(pk) R
    θJC(t)
    P(pk)
    t2
    1
    0.01
    0.02
    0.05
    0.1
    0.2
    0.5
    0.03
    0.3
    D = 0.5
    D = 0.2
    D = 0.1
    D = 0.05
    SINGLE PULSE
    SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS
    INTRODUCTION
    The primary considerations when selecting a power
    transistor for SWITCHMODE applications are voltage and
    current ratings, switching speed, and energy handling
    capability. In this section, these specifications will be
    discussed and related to the circuit examples illustrated in
    Table 2.(1)
    VOLTAGE REQUIREMENTS
    Both blocking voltage and sustaining voltage are important
    in SWITCHMODE applications.
    Circuits B and C in Table 2 illustrate applications that
    require high blocking voltage capability. In both circuits the
    switching transistor is subjected to voltages substantially
    higher than VCC after the device is completely off (see load
    line diagrams at IC = Ileakage ≈ 0 in Table 2). The blocking
    capability at this point depends on the base to emitter
    conditions and the device junction temperature. Since the
    highest device capability occurs when the base to emitter
    junction is reverse biased (VCEV), this is the recommended
    and specified use condition. Maximum ICEV at rated VCEV is
    specified at a relatively low reverse bias (1.5 Volts) both at
    25
    °C and 100°C. Increasing the reverse bias will give some
    improvement in device blocking capability.
    The sustaining or active region voltage requirements in
    switching applications occur during turn–on and turn–off. If
    the load contains a significant capacitive component, high
    current and voltage can exist simultaneously during turn–on
    and the pulsed forward bias SOA curves (Figure 6) are the
    proper design limits.
    For inductive loads, high voltage and current must be
    sustained simultaneously during turn–off, in most cases, with
    the base to emitter junction reverse biased. Under these
    conditions the collector voltage must be held to a safe level
    at or below a specific value of collector current. This can be
    accomplished by several means such as active clamping,
    RC snubbing, load line shaping, etc. The safe level for these
    devices is specified as a Reverse Bias Safe Operating Area
    (Figure 7) which represents voltage–current conditions that
    can be sustained during reverse biased turn–off. This rating
    is verified under clamped conditions so that the device is
    never subjected to an avalanche mode.
    (1) For detailed information on specific switching applications, see
    (1) Motorola Application Note AN719, AN873, AN875, AN951.
    相關(guān)PDF資料
    PDF描述
    MJE13007BV 8 A, 400 V, NPN, Si, POWER TRANSISTOR
    MJE13009AN 12 A, 400 V, NPN, Si, POWER TRANSISTOR
    MJE13009AJ 12 A, 400 V, NPN, Si, POWER TRANSISTOR
    MJE13009BA 12 A, 400 V, NPN, Si, POWER TRANSISTOR
    MJE13009AU 12 A, 400 V, NPN, Si, POWER TRANSISTOR
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    MJE13007D 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
    MJE13007DG-TA3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
    MJE13007DL-TA3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
    MJE13007F 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Switch Mode Application
    MJE13007F_05 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-220IS PACKAGE
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