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參數(shù)資料
| 型號： | MJE122 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:2; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight |
| 中文描述： | 互補性的芯片功率DARLINGTONS |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 267K |
| 代理商： | MJE122 |
3
Motorola Bipolar Power Transistor Device Data
P
0
80
60
40
20
4
3
2
1
TA
TC
0
Figure 3. Maximum Power Derating
T, TEMPERATURE (
°
C)
40
60
100
120
160
80
140
TC
20
t, TIME (ms)
0.01
0.1
0.5
10
20
50
100
200
500
5K
10K
1
5
2
1
0.2
0.1
0.05
r
SINGLE PULSE
R
θ
JC(t) = r(t) R
θ
JC
TJ(pk) – TC = P(pk) R
θ
JC(t)
R
Figure 4. Thermal Response
0.5
0.3
0.03
0.02
0.2
1K
2K
30
300
3
0.3
3K
TA
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
Safe Operating Area
1
10
1
30
CURRENT LIMIT
SECONDARY BREAKDOWN
LIMIT
THERMAL LIMIT @
TC = 25
°
C (SINGLE PULSE)
I
0.1
2
3
50
3
2
0.3
10
0.2
dc
TJ = 150
°
C
1 ms
5 ms
100
μ
s
5
0.5
5
100
20
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown.
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