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參數(shù)資料
| 型號： | MJD44E3-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369-07, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | MJD44E3-1 |
MJD44E3
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MJD44E3/D
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD44H11T4-A | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| MJD45H11T4-A | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD45H11-1 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD44H11-1 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD47-I | 1 A, 250 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD44E3T4 | 功能描述:達林頓晶體管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD44E3T4G | 功能描述:達林頓晶體管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD44H11 | 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD44H11_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS |
| MJD44H11_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors |
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