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參數(shù)資料
| 型號(hào)： | MJD42C-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 170K |
| 代理商： | MJD42C-1 |
MJD41C (NPN) MJD42C (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
100
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICEO
50
mAdc
Collector Cutoff Current
(VCE = 100 Vdc, VEB = 0)
ICES
10
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
0.5
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.3 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
hFE
30
15
75
CollectorEmitter Saturation Voltage
(IC = 6 Adc, IB = 600 mAdc)
VCE(sat)
1.5
Vdc
BaseEmitter On Voltage
(IC = 6 Adc, VCE = 4 Vdc)
VBE(on)
2
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (Note 3)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
3
MHz
SmallSignal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
20
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. fT = hfe ftest.
ORDERING INFORMATION
Device
Package Type
Package
Shipping
MJD41CRL
DPAK
369C
1800 / Tape & Reel
MJD41CRLG
DPAK
(PbFree)
MJD41CT4
DPAK
2500 / Tape & Reel
MJD41CT4G
DPAK
(PbFree)
MJD42C
DPAK
75 Units / Rail
MJD42CG
DPAK
(PbFree)
MJD42C1
DPAK3
369D
MJD42C1G
DPAK3
(PbFree)
MJD42CRL
DPAK
369C
1800 / Tape & Reel
MJD42CRLG
DPAK
(PbFree)
MJD42CT4
DPAK
2500 / Tape & Reel
MJD42CT4G
DPAK
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD42C1G | 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD42CG | 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD42CRL | 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD42CRLG | 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD42CT4 | 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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