參數(shù)資料
型號: MJ410
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 5 AMPERE POWER TRANSISTOR NPN SILICON
中文描述: 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件頁數(shù): 2/4頁
文件大小: 139K
代理商: MJ410
2
Motorola Bipolar Power Transistor Device Data
I
5.0
5.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
50
200
1.0
0.1
0.02
100
Figure 1. Active Region Safe Operating Area
10
0.5
0.2
0.05
0.01
2.0
10
20
500
TJ = 150
°
C
500
μ
s
1.0 ms
dc
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION AT TC = 75
°
C
CURVES APPLY BELOW RATED VCEO
5.0 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dis-
sipation then the curves indicate.
The data of Figure 5 is based on TJ(pk)
=
150 C; TC is
variable depending on conditions. Pulse curves are valid for
duty cycles of 10% provided TJ(pk)
temperatures, thermal limitations will reduce the power that
can be handled to values than the limitations imposed by
second breakdown.
150 C. At high case
I
h
2.0
0.05
IC, COLLECTOR CURRENT (AMP)
1.0
1.6
0
1.2
0.8
0.4
TJ = 150
°
C
100
IC, COLLECTOR CURRENT (AMP)
1.0
70
10
30
7.0
5.0
Figure 2. DC Current Gain
Figure 3. ‘‘On” Voltages
Figure 4. Sustaining Voltage Test Load Line
0.1
0.2
0.3
0.5
2.0 3.0
5.0
VCE(sat) @ IC/IB = 10
VBE(sat) @ IC/IB = 10
VCE = 5.0 Vdc
TJ = 150
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VCE(sat) @ IC/IB = 5
0.05
0.1
0.2
0.3
0.5
2.0
3.0
5.0
V
0
500
VCEO(sus) IS ACCEPTABLE WHEN
VCE
RATED VCEO AT IC = 100 mA
400
200
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Sustaining Voltage Test Circuit
500
300
0
400
300
200
100
200
+
+
6.0 V
50 V
TO SCOPE
X
Y
1.0
300
Hg RELAY
50 mH
50
20
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