參數(shù)資料
型號: MCF51QE128
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: 32-Bit Version 1 ColdFire㈢ Central Processor Unit (CPU)
中文描述: 32位版本1的ColdFire㈢中央處理器(CPU)的
文件頁數(shù): 30/38頁
文件大小: 429K
代理商: MCF51QE128
MCF51QE128 Series Advance Information Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
30
3.10.6
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply. For more detailed
information about program/erase operations, see the Memory section of the
MCF51QE128 Reference Manual
.
3.11
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependent on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
Table 18. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
-40
°
C to 85
°
C
V
prog/erase
1.8
3.6
V
D
Supply voltage for read operation
V
Read
1.8
3.6
V
D
Internal FCLK frequency
1
1
The frequency of this clock is controlled by a software setting.
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
3
The program and erase currents are additional to the standard run I
DD
. These values are measured at room temperatures
with V
DD
= 3.0 V, bus frequency = 4.0 MHz.
4
Typical endurance for flash
was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale defines typical endurance, please refer to Engineering Bulletin EB619,
Typical Endurance for Nonvolatile
Memory
.
5
Typical data retention
values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
°
C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618,
Typical Data Retention for Nonvolatile Memory.
f
FCLK
150
200
kHz
D
Internal FCLK period (1/FCLK)
t
Fcyc
5
6.67
μ
s
P
Longword program time (random location)
(2)
t
prog
9
t
Fcyc
P
Longword program time (burst mode)
(2)
t
Burst
4
t
Fcyc
P
Page erase time
2
t
Page
4000
t
Fcyc
P
Mass erase time
(2)
t
Mass
20,000
t
Fcyc
Longword program current
3
R
IDDBP
9.7
mA
Page erase current
3
R
IDDPE
7.6
mA
C
Program/erase endurance
4
T
L
to T
H
= –40
°
C to + 85
°
C
T = 25
°
C
10,000
100,000
cycles
C
Data retention
5
t
D_ret
15
100
years
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相關代理商/技術參數(shù)
參數(shù)描述
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MCF51QE32 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:32-Bit Version 1 ColdFire㈢ Central Processor Unit (CPU)
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