Solving Equation 1 an" />
參數資料
型號: MC9S08JE64VLH
廠商: Freescale Semiconductor
文件頁數: 7/44頁
文件大?。?/td> 0K
描述: IC MCU 8BIT 64K FLASH 64LQFP
標準包裝: 160
系列: S08
核心處理器: S08
芯體尺寸: 8-位
速度: 48MHz
連通性: I²C,SCI,SPI,USB
外圍設備: LVD,POR,PWM,WDT
輸入/輸出數: 33
程序存儲器容量: 64KB(64K x 8)
程序存儲器類型: 閃存
RAM 容量: 12K x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 3.6 V
數據轉換器: A/D 6x12b
振蕩器型: 內部
工作溫度: -40°C ~ 105°C
封裝/外殼: 64-LQFP
包裝: 托盤
Preliminary Electrical Characteristics
Freescale Semiconductor
15
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of TA.
2.4
ESD Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling
precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade Integrated Circuits.
(http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete dc parametric and functional testing is performed per the applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
Table 7. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human Body
Series Resistance
R1
1500
Ω
Storage Capacitance
C
100
pF
Number of Pulse per pin
3
Machine
Series Resistance
R1
0
Ω
Storage Capacitance
C
200
pF
Number of Pulse per pin
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
Table 8. ESD and Latch-Up Protection Characteristics
#
Rating
Symbol
Min
Max
Unit
C
1
Human Body Model (HBM)
VHBM
±2000
V
T
2
Machine Model (MM)
VMM
±200
V
T
3
Charge Device Model (CDM)
VCDM
±500
V
T
4
Latch-up Current at TA = 125°CILAT
±100
mA
T
Preliminary — Subject to Change
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