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參數(shù)資料
| 型號： | RN5006 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 91K |
| 代理商： | RN5006 |
RN5006
2001-10-29
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-offcurrent
I
CBO
―
V
CB
= 10V, I
E
= 0
―
―
0.1
μA
Emitter cut-off current
I
EBO
―
V
EB
= 6V, I
C
= 0
0.462
0.60
0.857
mA
Collector-emitter breakdown voltage
V
(BR)CES
―
I
C
= 1mA
10
―
―
V
h
FE (1)
V
CE
= 1V, I
C
= 0.5A
160
―
600
DC current gain
h
FE (2)
―
V
CE
= 1V, I
C
= 4.0A
60
―
―
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 2A, I
B
= 0.05A
―
―
0.5
V
Transition frequency
f
T
―
V
CE
= 1V, I
C
= 0.5A
―
140
―
MHz
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1 MHz
―
30
―
pF
Resistor
R
―
―
7
10
13
k
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