參數(shù)資料
型號： MC10H660FN
廠商： MOTOROLA INC
元件分類： 通用總線功能
英文描述： 4-Bit ECL/TTL Load Reducing DRAM Driver
中文描述： ECL TO TTL TRANSLATOR, TRUE OUTPUT, PQCC28
封裝： PLASTIC, LCC-28
文件頁數(shù)： 2/7頁
文件大?。?/td> 114K
代理商： MC10H660FN
MC10H660 MC100H660
MOTOROLA
MECL Data
DL122 — Rev 6
2–122
DC CHARACTERISTICS:
VCCT = 5.0 V
±
10%; VEE = –5.2 V
±
5% (10H version); VEE = –4.2 V to –5.5 V (100H version)
0
°
C
25
°
C
85
°
C
Symbol
Characteristic
min
max
min
max
min
max
Unit
Condition
IEE
ICCH
ICCL
Power Supply Current
ECL
41.8
44.0
46.2
mA
TTL
77.0
77.1
79.2
mA
94.6
95.7
96.8
mA
TTL CHARACTERISTICS:
VCCT = 5.0 V
±
10%; VEE = –5.2 V
±
5% (10H version); VEE = –4.2 V to –5.5 V (100H version)
0
°
C
25
°
C
85
°
C
Symbol
Characteristic
min
max
min
max
min
max
Unit
Condition
VOH
VOL
IOS
Output HIGH Voltage
2.6
2.6
2.6
V
IOH = –24 mA
IOL = 24 mA
See Note 1
Output LOW Voltage
0.50
0.50
0.50
V
Output Short Circuit Current*
*
*
*
V
1. The outputs must not be shorted to ground, as this will result in permanent damage to the device. The high drive outputs of this device do not
include a limiting IOS resistor. Minimum recommended load capacitance is 100 pF. Precise output performance and waveforms will depend
on the exact nature of the actual load. The lumped load is of course an approximation to a real memory system load.
AC Characteristics:
VCCT = 5.0 V
±
10%; VEE = –5.2 V
±
5% (10H version) VEE = –4.2 V to –5.5 V (100H version)
0
°
C
25
°
C
85
°
C
Symbol
Characteristic
min
max
min
max
min
max
Unit
Condition
ts
tn
tw(H)
tR
tF
Set–up Time, D to LEN
0.5
0.5
0.5
ns
Hold Time, D to LEN
1.5
1.5
1.5
ns
LEN Pulse Width, HIGH
2.0
2.0
2.0
ns
Output Rise/Fall Time
0.8 V – 2.0 V
0.5
2.0
0.5
2.0
0.5
2.0
ns
CL = 200 pF
tPLH
tPHL
Propagation Delay
to Output
D
3.0
4.0
4.5
6.0
8.0
9.5
3.0
4.0
4.5
6.0
8.0
9.5
3.0
4.0
4.5
6.0
8.0
9.5
ns
CL = 100 pF
CL = 200 pF
CL = 300 pF
50% point of ECL input
to 1.5 V point of TTL
output
LEN
4.3
4.9
5.4
6.9
8.9
10.4
4.3
4.9
5.4
6.9
8.9
10.4
4.3
4.9
5.4
6.9
8.9
10.4
ns
CL = 100 pF
CL = 200 pF
CL = 300 pF
tPHL
Propagation Delay
to Output
R
4.1
4.5
5.0
9.1
8.5
10.0
4.1
4.5
5.0
9.1
8.5
10.0
4.1
4.5
5.0
9.1
8.5
10.0
ns
CL = 100 pF
CL = 200 pF
CL = 300 pF
tPLH
Propagation Delay
to Output
D
3.9
4.8
5.8
5.9
7.2
8.8
3.9
4.8
5.8
5.9
7.2
8.8
4.0
5.0
5.9
6.1
7.4
8.9
ns
CL = 100 pF
CL = 200 pF
CL = 300 pF
50% point of ECL input
to 2.4 V point of TTL
output
LEN
4.7
5.5
6.3
7.1
8.3
9.5
4.7
5.5
6.3
7.1
8.3
9.5
4.8
5.6
6.4
7.2
8.4
9.6
ns
CL = 100 pF
CL = 200 pF
CL = 300 pF
tPHL
Propagation Delay
to Output
D
4.5
6.0
7.0
6.7
9.0
10.6
4.5
6.0
7.0
6.7
9.0
10.6
4.4
6.0
6.9
6.6
9.0
10.3
ns
CL = 100 pF
CL = 200 pF
CL = 300 pF
50% point of ECL input
to 0.8 V point of TTL
output
LEN
4.0
4.9
6.0
6.0
7.3
9.0
4.0
4.9
6.0
6.0
7.3
9.0
4.0
4.9
5.9
6.0
7.3
8.9
ns
CL = 100 pF
CL = 200 pF
CL = 300 pF
R
4.3
6.1
7.2
6.5
9.1
10.8
4.3
6.1
7.2
6.5
9.1
10.8
4.3
6.1
7.2
6.5
9.1
10.8
ns
CL = 100 pF
CL = 200 pF
CL = 300 pF
相關(guān)PDF資料
PDF描述
MC100H660FN 4-Bit ECL/TTL Load Reducing DRAM Driver
MC12028AD MECL PLL COMPONENTS ±64/65, ±128/129 DUAL MODULUS PRESCALER
MC12028 MECL PLL COMPONENTS ±64/65, ±128/129 DUAL MODULUS PRESCALER
MC12028A MECL PLL COMPONENTS ±64/65, ±128/129 DUAL MODULUS PRESCALER
MC12028B MECL PLL COMPONENTS ±64/65, ±128/129 DUAL MODULUS PRESCALER
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