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參數(shù)資料
| 型號(hào)： | MBT2907ADW |
| 廠商： | WEITRON INTERNATIONAL CO., LTD. |
| 英文描述： | Dual General Purpose Transistor PNP+PNP Silicon |
| 中文描述： | 雙通用硅晶體管的新進(jìn)步黨進(jìn)步黨 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MBT2907ADW |
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
MBT2907ADW
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -50 mAdc, VCE= -20 Vdc, f=100MHz)
Output Capacitance
(VCB= -10 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB=-2.0 Vdc, IC=0, f=1.0MHz)
fT
Cobo
Cibo
200
-
-
-
8.0
MHz
pF
pF
30
Switching Characteristics
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
(Vcc= -30 Vdc, Ic= -150 mAdc,
I
B1
= -15 mAdc)
t
t
t
t
-
-
-
-
45
10
40
100
ns
WEITRON
http://www.weitron.com.tw
DC Current Gain
(IC= -100uAdc, VCE=-10Vdc)
(IC= -1.0 mAdc, VCE= -10Vdc)
(IC= -10 mAdc, VCE= -10Vdc)
(IC= -150 mAdc, VCE= -10Vdc)
(IC= -500 mAdc, VCE= -10Vdc)
Collector-Emitter Saturation Voltage
(IC= -150 mAdc, IB= -15mAdc)
(IC= -500 mAdc, IB= -50mAdc)
Base-Emitter Saturation Voltage
(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)
HFE
VCE(sat)
VBE(sat)
-
-
-
-
Vdc
Vdc
75
100
100
100
50
-
-
-
-
300
-
-0.4
-1.6
-1.3
-2.6
On Characteristics
off
d
r
off
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