參數(shù)資料
型號(hào)： MBRF30H100CT-E3/45
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 144K
代理商： MBRF30H100CT-E3/45
New Product
MBR(F,B)30H90CT & MBR(F,B)30H100CT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88791
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward
voltage per diode (1)
IF = 15 A
IF = 30 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
0.82
0.67
0.93
0.80
V
Maximum reverse current at rated VR
per diode (2)
TJ = 25 °C
TJ = 125 °C
IR
5.0
6.0
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance per diode
RθJC
1.9
4.6
1.9
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR30H100CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF30H100CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB30H100CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB30H100CT-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
MBR30H100CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF30H100CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB30H100CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB30H100CTHE3/81 (1)
1.35
81
800/reel
Tape and reel
Figure 1. Forward Derating Curve Per Diode
0
5
10
15
20
25
30
35
75
50
25
0
100
125
150
175
MBRF30H90CT - MBRF30H100CT
MBR30H90CT - MBR30H100CT
MBRB30H90CT - MBRB30H100CT
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
100
150
200
250
300
1
10
100
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相關(guān)PDF資料
PDF描述
MBRB30H100CTHE3/81 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB30H90CT-HE3/81 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB30H100CT-E3/81 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
MBR30H100CTHE3/45 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR30H90CT-HE3/45 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBRF30H100CTG 功能描述:肖特基二極管與整流器 30A 100V H-SERIES SCHOTTK RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRF30H100CTHE3/45 功能描述:肖特基二極管與整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRF30H150CT 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF30H150CT/45 功能描述:肖特基二極管與整流器 150 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRF30H150CT-E3/45 功能描述:肖特基二極管與整流器 150 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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