參數(shù)資料
型號： MBRF10H45-E3/45
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝： ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN
文件頁數(shù)： 3/5頁
文件大?。?/td> 131K
代理商： MBRF10H45-E3/45
MBR(F,B)10H35 thru MBR(F,B)10H60
Vishay General Semiconductor
Document Number: 88780
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 3. Typical Instantaneous Forward Characteristics
0
5
10
15
25
0
50
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
10
1
100
25
50
75
100
125
150
175
T
J = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
1
10
100
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
020
60
40
100
80
0.0001
0.001
0.1
0.01
1
10
100
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(mA)
10
0
1
100
1000
10 000
100
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
0.01
10
1
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相關PDF資料
PDF描述
MBRF10H60-HE3/45 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRB10H50-HE3/81 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
MBR10H35-E3/45 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRF10H35-HE3/45 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRB1545CT 7.5 A, SILICON, RECTIFIER DIODE
相關代理商/技術參數(shù)
參數(shù)描述
MBRF10H45HE3/45 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier
MBRF10H50 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier
MBRF10H60 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers
MBRF10H60-E3/45 功能描述:肖特基二極管與整流器 60 Volt 10A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRF10H60HE3/45 功能描述:肖特基二極管與整流器 60 Volt 10A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*