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參數(shù)資料
| 型號： | MBRB30H100CT-HE3/81 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 144K |
| 代理商： | MBRB30H100CT-HE3/81 |
New Product
MBR(F,B)30H90CT & MBR(F,B)30H100CT
Vishay General Semiconductor
Document Number: 88791
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
100
10
0.1
0.01
1
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 100 °C
T
J = 150 °C
T
J = 125 °C
T
J = 175 °C
T
J = 25 °C
1
0.1
10
100
1000
10 000
0.01
20
100
40
60
80
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
T
J = 100 °C
T
J = 150 °C
T
J = 125 °C
T
J = 175 °C
T
J = 25 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
1
100
10 000
0.1
10
1000
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
0.1
0.01
1
10
100
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRF30H100CT-E3/45 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB30H100CTHE3/81 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB30H90CT-HE3/81 | 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB30H100CT-E3/81 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBR30H100CTHE3/45 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
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