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參數(shù)資料
| 型號： | MBRB20H60CT/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 114K |
| 代理商： | MBRB20H60CT/45 |
MBR20HxxCT, MBRF20HxxCT & MBRB20HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88787
www.vishay.com
4-Feb-03
3
1
10
100
25
50
75
100
125
150
175
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 5 – Typical Junction
Capacitance Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
Number of Cycles at 60 HZ
Reverse Voltage (V)
P
eak
F
orw
ard
Surge
Current
(A)
0
5
10
15
20
25
025
50
75
100
125
150
175
Fig. 1 – Forward Current
Derating Curve
A
v
er
age
F
orw
ard
Current
(A)
Case Temperature (
°C)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
0.01
0.1
0.1 0.2 0.3
0.4 0.5
0.6
0.7 0.8 0.9
1.0
1.1
0
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous
F
orw
ard
Current
(A)
Fig. 4 – Typical Reverse
Characteristics Per Leg
Instantaneous
Re
v
erse
Leakage
Current
(mA)
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
T
ranseint
Ther
mal
Impedance
(
°C/W)
pF
-
J
unction
Capacitance
020
60
40
100
80
0.0001
0.001
0.1
0.01
1
10
100
0.1
1
10
100
1000
0.01
0.1
1
10
MBR20H35CT -- MBR20H45CT
MBR20H50CT -- MBR20H60CT
MBR20H35CT -- MBR20H45CT
MBR20H50CT -- MBR20H60CT
MBR20H35CT -- MBR20H45CT
MBR20H50CT -- MBR20H60CT
TJ = 150
°C
TJ = 125
°C
TJ = 25
°C
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = 25
°C
f = 1.0 MHZ
Vsig = 50mVp-p
TJ = 150
°C
TJ = 125
°C
TJ = 25
°C
MBRF
MBR, MBRB
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
相關PDF資料 |
PDF描述 |
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| MBR20H90CT-HE3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB20H90CT-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF20H100CT-E3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB20H100CTHE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBR20H100CTHE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRB20H60CT-E3/81 | 功能描述:肖特基二極管與整流器 60 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB20H60CTHE3/81 | 功能描述:肖特基二極管與整流器 60 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB20H90CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| MBRB20H90CT/31 | 功能描述:肖特基二極管與整流器 90 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB20H90CT/81 | 功能描述:肖特基二極管與整流器 90 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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