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參數(shù)資料
| 型號(hào)： | MBRB2080CT-G |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCHOTTKY RECTIFIER |
| 中文描述： | 10 A, SILICON, RECTIFIER DIODE |
| 封裝： | GREEN, PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | MBRB2080CT-G |
SENSITRON
SEMICONDUCTOR
Technical Data
Green Products
Data Sheet 3468, Rev. D
Maximum Ratings:
Characteristics
Symbol
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
MBR2080/90/100CT-G
MBRB2080/90/100CT-G
MBR2080/90/100CT-1-G
Condition
Max.
U
ni
ts
V
80
MBR2080CT-G
MBRB2080CT-G
MBR2080CT-1-G
MBR2090CT-G
MBRB2090CT-G
MBR2090CT-1-G
MBR20100CT-G
MBRB20100CT-G
MBR20100CT-1-G
10(Per leg)
20(Per device)
150
90
Peak Inverse Voltage
V
RWM
-
100
Max. Average Forward
I
F(AV)
50% duty cycle @T
C
=133
℃
,
rectangular wave form
8.3 ms, half Sine pulse
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Peak Repetitive Reverse
Surge Current (per leg)
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg)*
I
FSM
A
I
RRM
2.0
μ
s,1.0KHz
0.5
A
Symbol
V
F1
Condition
Max.
0.85
0.95
0.75
0.85
1.00
Units
V
@ 10A, Pulse, T
J
= 25
℃
@ 20 A, Pulse, T
J
= 25
℃
@ 10 A, Pulse, T
J
= 125
℃
@ 20 A, Pulse, T
J
= 125
℃
@V
R
= rated V
R
T
J
= 25
℃
@V
R
= rated V
R
T
J
= 125
℃
V
F2
V
Max. Reverse Current
(per leg)*
I
R1
mA
I
R2
6.0
mA
V/
μ
s
Max. Voltage Rate of Change
*
Pulse Width < 300μs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Approximate Weight
Mounting Torque
dv/dt
-
10,000
Symbol
T
J
T
stg
R
θ
JC
Condition
-
-
DC operation
Specification
-55 to +150
-55 to +150
2.0
Units
℃
℃
℃
/W
wt
T
M
-
-
1.9
g
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2
PAK TO-262
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