參數(shù)資料
型號: MBRB1550CT-E3
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 3/3頁
文件大?。?/td> 46K
代理商: MBRB1550CT-E3
MBR15xxCT, MBRF15xxCT & MBRB15xxCT
Vishay Semiconductors
formerly General Semiconductor
Document Number 88670
www.vishay.com
03-Oct-02
3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Case Temperature (
°C)
Fig. 1 – Forward Current
Derating Curve
A
verage
Forward
Current
(A)
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Instantaneous Forward Voltage (V)
Instantaneous
Forward
Current
(A)
Percent of Rated Peak Reverse Voltage (%)
Instantaneous
Reverse
Current
(mA)
Fig. 4 – Typical Reverse
Characteristics Per Leg
Fig. 6 – Typical Transient Thermal
Impedance Per Leg
0
50
100
150
0
5
10
15
20
25
Resistive or Inductive Load
1
10
100
50
25
75
100
125
150
175
Number of Cycles at 60 HZ
t, Pulse Duration (sec.)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
Peak
Forward
Surge
Current
(A)
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
50
MBR1535 - MBR1545
MBR1550 & MBR1560
TJ = 125
°C
TJ = 25
°C
Pulse Width = 300
s
1% Duty Cycle
0
20
40
60
80
100
0.001
0.01
0.1
1
10
50
MBR1535 - MBR1545
MBR1550 & MBR1560
TJ = 25
°C
TJ = 75
°C
TJ = 125
°C
0.1
1
10
100
10
100
1,000
4,000
Reverse Voltage (V)
Junction
Capacitance
(pF)
T
ransient
Thermal
Impedance
(
°CW)
Fig. 5 – Typical Junction
Capacitance Per Leg
TJ = 25°C
f = 1.0MHZ
Vsig = 50MVp-p
MBR1535 - MBR1545
MBR1550 & MBR1560
0.01
0.1
1
10
100
0.1
1
10
100
相關PDF資料
PDF描述
MBRB1550CT/31-E3 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB1560CT/45-E3 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRF1535CT/45 7.5 A, 35 V, SILICON, RECTIFIER DIODE
MBR1545CT/45 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR1535CT 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
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