參數(shù)資料
型號(hào)： MBR30H60PT
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 整流器
英文描述： 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD
封裝： PLASTIC, TO-3P, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 99K
代理商： MBR30H60PT
MBR30H35PT thru MBR30H60PT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88792
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR30H35PT
MBR30H45PT
MBR30H50PT
MBR30H60PT
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum instantaneous forward voltage
per diode (1)
IF = 20 A
IF = 30 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ =125 °C
VF
-
0.54
-
0.62
0.66
0.58
0.73
0.66
-
0.60
-
0.66
0.74
0.63
0.83
0.70
V
Maximum reverse current at rated VR
per diode (2)
TJ = 25 °C
TJ = 125 °C
IR
-
6.0
150
25
-
4.0
150
25
A
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H35PT
MBR30H45PT
MBR30H50PT
MBR30H60PT
UNIT
Thermal resistance, junction to case
per diode
RθJC
1.4
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
MBR30H45PT-E3/45
6.13
45
30/tube
Tube
Figure 1. Forward Current Derating Curve
0
10
20
30
40
025
50
75
100
125
150
175
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10
1
100
0
50
100
150
250
200
Number of Cycles at 60 Hz
P
e
ak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
相關(guān)PDF資料
PDF描述
MBR30H90CT-E3/45 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
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MBRF30H100CT-E3/45 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRB30H100CTHE3/81 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
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