參數資料
型號： MBR30H35CT-E3/45
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數： 2/5頁
文件大小： 147K
代理商： MBR30H35CT-E3/45
New Product
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88866
Revision: 31-Jul-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note:
(1) Automotive grade AEC-Q101 qualified
Electrostatic discharge capacitor voltage human
body model: C = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
UNIT
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR30H35CT
MBR30H45CT
MBR30H50CT
MBR30H60CT
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum instantaneous forward
voltage per diode (1)
IF = 15 A
IF = 30 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
-
0.49
-
0.62
0.56
0.73
0.67
-
0.55
-
0.68
0.59
0.83
0.71
V
Maximum reverse current
at rated VR per diode
(2)
TJ = 25 °C
TJ = 125 °C
IR
-
5.0
80
15
-
4.0
60
15
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Thermal resistance, junction to case per diode
RθJC
1.5
4.5
1.5
°C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR30H45CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF30H45CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB30H45CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB30H45CT-E3/81
1.35
81
800/teel
Tape and reel
TO-220AB
MBR30H45CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF30H45CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB30H45CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB30H45CTHE3/81 (1)
1.35
81
800/teel
Tape and reel
相關PDF資料
PDF描述
MBRB30H35CT-E3/45 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB30H50CT-E3/45 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB30H50CT-E3/81 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRF30H60CT-E3/45 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF30H45CTHE3/45 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
相關代理商/技術參數
參數描述
MBR30H35PT 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
MBR30H35PT-E3/45 功能描述:肖特基二極管與整流器 30 Amp 35 Volt Dual 200 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR30H45CT 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers
MBR30H45CT/45 功能描述:肖特基二極管與整流器 45 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR30H45CT-E3/45 功能描述:肖特基二極管與整流器 45 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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