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參數(shù)資料
| 型號： | MBR30H100CT/45-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 108K |
| 代理商： | MBR30H100CT/45-E3 |
MBR30H100CT, MBRF30H100CT & MBRB30H100CT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88791
www.vishay.com
11-Jul-03
3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0.1
0.0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
100
10
0.1
0.01
1.0
1
0.1
10
100
1000
10000
0.01
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
I R
--
Instantaneous
Reverse
Current
(
A)
Transient
Thermal
Impedance
(
°C/W
)
Junction
Capacitance
(pF)
1
10
100
10000
0.1
10
Fig. 5 – Typical Junction Capacitance
Per Leg
Reverse Voltage (V)
20
100
40
60
80
Fig. 4 – Typical Reverse
Characteristics Per Leg
Fig. 6 – Typical Transient
Thermal Impedance
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
I F
--
Instantaneous
Forward
Current
(A)
TJ = 175°C
100
°C
125
°C
150
°C
25
°C
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
175
Fig. 1 – Forward Derating Curve
Per Leg
A
v
er
age
F
orw
ard
Current
(A)
Case Temperature (
°C)
TJ = 175°C
150
°C
125
°C
100
°C
25
°C
0.1
0.01
1
10
100
MBRF30H90CT - MBRF30H100CT
MBR30H90CT - MBR30H100CT
MBRB30H90CT - MBRB30H100CT
0
50
100
150
200
250
300
1
10
100
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
Number of Cycles at 60 HZ
Tj = Tj max
8.3ms Single Half-Wave
(JEDEC Method)
P
eak
F
orw
ard
Surge
Current
(A)
1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR30H100CT/45 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB30H90CT/31 | 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF30H100CT/45 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR30H100CT-E3 | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF30H100CT | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR30H100CT-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR30H100CT-E3 | 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Intertechnologies 功能描述:15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR30H100CT-E3/45 | 功能描述:肖特基二極管與整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H100CT-E3/4W | 功能描述:肖特基二極管與整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H100CTF-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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