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參數(shù)資料
| 型號(hào)： | MBR3035CT-1-G |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 15 A, SILICON, RECTIFIER DIODE, TO-262AA |
| 封裝： | GREEN, PLASTIC, TO-262, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | MBR3035CT-1-G |
SENSITRON
SEMICONDUCTOR
Technical Data
Green Products
Data Sheet 3492, Rev. A
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR3035-G/3045CT-G
MBRB3035-G/3045CT-G
MBR3035-G/3045CT-1-G
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
35
MBR3035CT-G
MBRB3035CT-G
MBR3035CT-1-G
Peak Inverse Voltage
VRWM
-
45
MBR3045CT-G
MBRB3045CT-G
MBR3045CT-1-G
V
15(Per leg)
Max. Average Forward
IF(AV)
50% duty cycle @TC = 123°C,
rectangular wave form
30(Per Device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine pulse
240
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg) *
VF1
@ 30A, Pulse, TJ = 25 °C
0.84
V
VF2
@ 15A, Pulse, TJ = 125
°C
@ 30A, Pulse, TJ = 125 °C
0.57
0.72
V
Max. Reverse Current
(per leg) *
IR1
@VR = rated VR
TJ = 25
°C
1.0
mA
IR2
@VR = rated VR
TJ = 100 °C
40
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 4V, TC = 25 °C
fSIG = 1MHz
500
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC
DC operation
1.6
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθJA
DC operation
50
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR3045CT-1-G | 15 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR3035CT-E3/45 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR3045CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB3035CT-HE3/81 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB3045CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR3035CT-1P | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBR3035CT-1PBF | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBR3035CT-1TRL | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBR3035CT-1TRLP | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBR3035CT-1TRLPBF | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
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