- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄39585 > MBR30150CT-1 (SENSITRON SEMICONDUCTOR) 30 A, SILICON, RECTIFIER DIODE, TO-262AA PDF資料下載
參數(shù)資料
| 型號(hào)： | MBR30150CT-1 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, SILICON, RECTIFIER DIODE, TO-262AA |
| 封裝： | PLASTIC, TO-262, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 82K |
| 代理商： | MBR30150CT-1 |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR30150CT
MBRB30150CT
MBR30150CT-1
Data Sheet 2929, Rev. B
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
150
V
Max. Average Forward
IF(AV)
50% duty cycle @TC = 133°C,
rectangular wave form
30
A
Peak Repetitive Forward
Current(per leg)
IFRM
Rated VR square wave,
20KHz TC = 133°C
20
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
150
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg) *
VF1
@ 15 A, Pulse, TJ = 25 °C
@ 30 A, Pulse, TJ = 25 °C
1.00
1.20
V
VF2
@ 15 A, Pulse, TJ = 125
°C
@ 30 A, Pulse, TJ = 125 °C
0.80
0.90
V
Max. Reverse Current (per
leg) *
IR1
@VR = rated VR
TJ = 25 °C
1.0
mA
IR2
@VR = rated VR
TJ = 125 °C
6.0
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz
400
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC
DC operation
2.0
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθJA
DC operation
60
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS
Mounting surface,
smooth and greased
0.50
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR3035-E3/4W | 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR3035CT-1-G | 15 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR3045CT-1-G | 15 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR3035CT-E3/45 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR3045CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR30150CTE3/TU | 制造商:Microsemi Corporation 功能描述:30A, 150V, VF=0.90V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 150V TO220AB |
| MBR30150F | 制造商:ASEMI 制造商全稱:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR30150FCT | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:30 Amp Schottky Barrier Rectifier 150 Volts |
| MBR30150FCTE3/TU | 制造商:Microsemi Corporation 功能描述:30A, 150V, VF=0.90V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 150V ITO220AB |
| MBR30150PT | 制造商:SIRECTIFIER 制造商全稱:Sirectifier Semiconductors 功能描述:Wide Temperature Range and High Tjm Schottky Barrier Rectifiers |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。