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參數(shù)資料
| 型號： | MBR20H90CTG-HE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 398K |
| 代理商： | MBR20H90CTG-HE3/45 |
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
Document Number: 88856
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0.1
0.3
1.1
0.5
100
10
0.1
0.01
1
0.7
0.9
T
J = 100 °C
T
J = 150 °C
T
J = 125 °C
T
J = 175 °C
T
J = 25 °C
T
J = - 40 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
1
0.1
10
100
10 000
0.01
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
1000
T
J = 100 °C
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
1
100
1000
0.1
10
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.01
10
1
100
10
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
100
0.1
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
1
3
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
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PDF描述 |
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| MBR20H100CTG-E3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
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| MBR30060CT | 150 A, 60 V, SILICON, RECTIFIER DIODE |
| MBR30100PT-E3 | 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR3090PT | 30 A, 90 V, SILICON, RECTIFIER DIODE, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR20H90CTHE3/45 | 功能描述:肖特基二極管與整流器 20 Amp 90 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR20HL100CT | 制造商:SIRECT 制造商全稱:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 20Amp 100Volt |
| MBR20HXX | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR20HXXCT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR20L100CT | 功能描述:肖特基二極管與整流器 20A,100V,DUAL SCHOTTKY Rect LOW VF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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