參數(shù)資料
型號(hào)： MBR20200CT-1-G
廠商： SENSITRON SEMICONDUCTOR
元件分類： 整流器
英文描述： 10 A, SILICON, RECTIFIER DIODE, TO-262AA
封裝： GREEN, PLASTIC, TO-262, 3 PIN
文件頁數(shù)： 3/4頁
文件大小： 172K
代理商： MBR20200CT-1-G
SENSITRON
SEMICONDUCTOR
Technical Data
Green Products
Data Sheet 3437, Rev. A
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR20200CT-G
MBRB20200CT-G
MBR20200CT-1-G
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
200
V
10(Per leg)
Max. Average Forward
IF(AV)
50% duty cycle @TC =125°C,
rectangular wave form
20(Per device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
180
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg)*
VF1
@ 10A, Pulse, TJ = 25
°C
@ 20 A, Pulse, TJ = 25
°C
0.90
1.00
V
VF2
@ 10 A, Pulse, TJ = 125
°C
@ 20 A, Pulse, TJ = 125
°C
0.80
0.90
V
Max. Reverse Current (per
leg)*
IR1
@VR = rated VR
TJ = 25
°C
1.00
mA
IR2
@VR = rated VR
TJ = 125
°C
50
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25
°C
fSIG = 1MHz
500
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC
DC operation
2.0
°C/W
Maximum Thermal
Resistance Junction to Case
(per package)
RθJC
DC operation
-
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS
Mounting surface,
smooth and greased
(only for TO-220)
-
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
相關(guān)PDF資料
PDF描述
MBRB20200CT-GT4 10 A, SILICON, RECTIFIER DIODE
MBRB20200CT-G 10 A, SILICON, RECTIFIER DIODE
MBR20200CTF-E1 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR20200CT 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR20200CT 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR20200CT-BP 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 200V 20A 3-Pin(3+Tab) TO-220AB Bulk 制造商:Micro Commercial Components 功能描述:Diode Schottky 200V 20A 3-Pin(3+Tab) TO-220AB Bulk
MBR20200CTC0 制造商:SKMI/Taiwan 功能描述:Diode Schottky 200V 20A 3-Pin(3+Tab) TO-220AB Tube 制造商:Taiwan Semiconductor 功能描述:Schottky diode 200V, 20A, TO-220AB 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 200V 20A 3-Pin(3+Tab) TO-220AB Tube
MBR20200CT-E1 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20200CTE3/TU 制造商:Microsemi Corporation 功能描述:20A, 200V, VF=0.90V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 20A 200V TO220AB
MBR20200CTF-E1 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
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