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參數(shù)資料
| 型號(hào)： | MBR1100TR |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 87K |
| 代理商： | MBR1100TR |
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93438
2
Revision: 06-Nov-08
MBR1100
Vishay High Power Products
Schottky Rectifier, 1 A
Note
(1) Pulse width < 300 s, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward voltage drop
See fig. 1
VFM (1)
1 A
TJ = 25 °C
0.85
V
2 A
0.96
1 A
TJ = 125 °C
0.68
2 A
0.78
Maximum reverse leakage current
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
0.5
mA
TJ = 125 °C
1.0
Typical junction capacitance
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
35
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
8.0
nH
Maximum voltage rate of change
dV/dt
Rated VR
10 000
V/s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
See fig. 4
80
°C/W
Approximate weight
0.33
g
0.012
oz.
Marking device
Case style DO-204AL (DO-41) (JEDEC)
MBR1100
dP
tot
dT
J
-------------
1
R
thJA
--------------
<
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