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參數(shù)資料
| 型號： | MBR1100PBF |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | PLASTIC, DO-41, 2 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 31K |
| 代理商： | MBR1100PBF |
MBR1100
Bulletin PD-20587 rev. B 03/03
2
www.irf.com
Part number
MBR1100
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
100
V
FM
Max. Forward Voltage Drop
0.85
V
@ 1A
* See Fig. 1
(1)
0.96
V
@ 2A
0.68
V
@ 1A
0.78
V
@ 2A
I
RM
Max. Reverse Leakage Current
0.5
mA
T
J
= 25 °C
* See Fig. 2
(1)
1.0
mA
T
J
= 125 °C
CT
Typical Junction Capacitance
35
pF
V
R
= 5VDC, (test signal range 100Khz to 1Mhz) 25°C
L
S
Typical Series Inductance
8.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/ s
(Rated VR)
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Parameters
Value
Units
Conditions
Electrical Specifications
(1) Pulse Width < 300s, Duty Cycle <2%
TJ
Max. Junction Temperature Range(*)
-40 to 150
°C
Tstg
Max. Storage Temperature Range
-40 to 150
°C
R
thJL
Max. Thermal Resistance Junction
80
°C/W DC operation (* See Fig. 4)
to Lead
(**)
wt
Approximate Weight
0.33(0.012) g (oz.)
Case Style
DO-204AL(DO-41)
Thermal-Mechanical Specifications
Parameters
Value
Units
Conditions
(**) Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from Package
I
F(AV)
Max. Average Forward Current
10
A
50% duty cycle @ T
C
= 85°C, rectangular wave form
* See Fig. 4
I
FSM
Max. Peak One Cycle Non-Repetitive
200
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 6
50
10ms Sine or 6ms Rect. pulse
EAS
Non-Repetitive Avalanche Energy
1.0
mJ
TJ = 25 °C, IAS = 0.5 Amps, L = 8 mH
I
AR
Repetitive Avalanche Current
0.5
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Following any rated
load condition and with
rated VRRM applied
A
Parameters
Value
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
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參數(shù)描述 |
|---|---|
| MBR1100RL | 功能描述:肖特基二極管與整流器 1A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1100RLG | 功能描述:肖特基二極管與整流器 1A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1100TR | 功能描述:DIODE SCHOTTKY 100V 1A DO204AL RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MBR1100TR | 制造商:International Rectifier 功能描述:Schottky Rectifier |
| MBR1100TR-M3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 1 A |
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