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| 型號(hào)： | MART100KP75E3 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 100000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 138K |
| 代理商： | MART100KP75E3 |
Preferred 100 kW Transient Voltage
Suppressor for AIRCRAFT POWER
BUS PROTECTION
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
RT100KP33A thru RT100KP400CA, e3
RT100KP33
–
400CA,
e3
t
Note: frequency is 1MHz
t – time
t - Time
FIGURE 7 – Waveform 3
FIGURE 8 – Waveform 4
FIGURE 9 – Waveform 5A
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4
μs. Equivalent peak pulse power at each of the pulse widths represented in
RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1 herein as well as Application Notes 104 and 120 (found on
Microsemi’s website) and are listed below.
WAVEFORM
NUMBER
PULSE WIDTH
μs
PEAK PULSE
POWER
kW
Peak Pulse Current
Conversion Factor *
from Rated IPP
at 6.6/69 s
3
4
340
3.40x
4
6.4/69
100
1.00x
5A
40/120
70
0.70x
* Multiply by the conversion factor shown with reference to the maximum rated IPP in the Electrical Characteristics Table on page 2.
Note: High current fast rise-time transients of 250 ns or less can more than triple the VC from parasitic inductance effects (V= -Ldi/dt) compared to the
clamping voltage shown in the initial Electrical Characteristics on page 1 as also described in Figures 5 and 6 herein.
Also see MicroNotes 127, 130, and 132 on the Microsemi website (Support section) for further information on Transient
Voltage Suppressors with reference to aircraft industry specification RTCA/DO-160E.
DIMENSIONS
Microsemi
Scottsdale Division
Page 4
Copyright
2007
8-22-2007
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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