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參數(shù)資料
| 型號： | M74VHC1GU04 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Single Unbuffered Inverter(非緩沖反相器) |
| 中文描述： | 單緩沖逆變器（非緩沖反相器） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 137K |
| 代理商： | M74VHC1GU04 |
MC74VHC1GU04
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
DC Supply Voltage
0.5 to
7.0
V
DC Input Voltage
0.5 to +7.0
V
DC Output Voltage
0.5 to V
CC
20
0.5
V
DC Input Diode Current
mA
DC Output Diode Current
20
mA
DC Output Sink Current
12.5
mA
DC Supply Current per Supply Pin
25
mA
Storage Temperature Range
65 to
150
°
C
°
C
°
C
Lead Temperature, 1 mm from Case for 10 Seconds
260
Junction Temperature Under Bias
150
JA
Thermal Resistance
SC70
5/SC
88A (Note 1)
TSOP
5
350
230
°
C/W
P
D
Power Dissipation in Still Air at 85
°
C
SC70
5/SC
88A
TSOP
5
150
200
mW
MSL
Moisture Sensitivity
Level 1
F
R
V
ESD
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V
0 @ 0.125 in
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
1500
200
N/A
V
I
LATCHUP
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm
by
1 inch, 2
ounce copper trace with no air flow.
2. Tested to EIA/JESD22
A114
A.
3. Tested to EIA/JESD22
A115
A.
4. Tested to JESD22
C101
A.
5. Tested to EIA/JESD78.
Latchup Performance
Above V
CC
and Below GND at 125
°
C (Note 5)
500
mA
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage
2.0
5.5
V
V
IN
DC Input Voltage
0.0
5.5
V
V
OUT
DC Output Voltage
0.0
V
CC
V
T
A
Operating Temperature Range
55
125
°
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
0
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
TIME, YEARS
N
T
°
T
°
T
°
T
°
T
°
T
°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M74VHC1GU04DFT1G | 功能描述:變換器 2-5.5V Single Unbuffered RoHS:否 制造商:NXP Semiconductors 電路數(shù)量:6 邏輯系列:74ABT 邏輯類型:BiCMOS 高電平輸出電流:- 15 mA 低電平輸出電流:20 mA 傳播延遲時間:2.2 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 工作溫度范圍: 封裝 / 箱體:DIP-14 封裝:Tube |
| M74VHC1GU04DFT2G | 功能描述:變換器 2-5.5V Single Unbuffered RoHS:否 制造商:NXP Semiconductors 電路數(shù)量:6 邏輯系列:74ABT 邏輯類型:BiCMOS 高電平輸出電流:- 15 mA 低電平輸出電流:20 mA 傳播延遲時間:2.2 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 工作溫度范圍: 封裝 / 箱體:DIP-14 封裝:Tube |
| M74VHC1GU04DFT2H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| M74VHC1GU04DTT1G | 功能描述:變換器 2-5.5V Single Unbuffered RoHS:否 制造商:NXP Semiconductors 電路數(shù)量:6 邏輯系列:74ABT 邏輯類型:BiCMOS 高電平輸出電流:- 15 mA 低電平輸出電流:20 mA 傳播延遲時間:2.2 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 工作溫度范圍: 封裝 / 箱體:DIP-14 封裝:Tube |
| M74VHC594RMTR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 BIT SHIFT REGISTER WITH OUTPUT REGISTER |
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