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參數(shù)資料
| 型號： | M29F002BB120K1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| 中文描述： | 2兆位的256Kb × 8，啟動座單電源閃存 |
| 文件頁數(shù)： | 4/22頁 |
| 文件大小： | 189K |
| 代理商： | M29F002BB120K1 |
M29F002BT, M29F002BB, M29F002BNT, M29F002BNB
12/22
Table 11. DC Characteristics
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
Note: 1. Excluding the RP input.
2. Sampled only, not 100% tested.
3. TA = 25°C, VCC = 5V.
Symbol
Parameter
Test Condition
Min
Typ (3)
Max
Unit
ILI
(1)
Input Leakage Current
0V
≤ VIN ≤ VCC
±1
A
ILR1
RP Leakage Current High
RP = VCC
±1
A
ILR2
RP Leakage Current Low
RP = VSS
–0.2
–10
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VCC
±1
A
ICC1
Supply Current (Read)
E = VIL, G = VIH,
f = 6MHz
515
mA
ICC2
Supply Current (Standby) TTL
E = VIH
1mA
ICC3
Supply Current (Standby) CMOS
E = VCC ±0.2V,
RP = VCC ±0.2V
30
100
A
ICC4
(2)
Supply Current (Program/Erase)
Program/Erase
Controller active
20
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2
VCC +0.5
V
VOL
Output Low Voltage
IOL = 5.8mA
0.45
V
VOH
Output High Voltage TTL
IOH = –12.5mA
2.4
V
Output High Voltage CMOS
IOH = –100A
VCC –0.4
V
VID
Identification Voltage
11.5
12.5
V
IID
Identification Current
A9 = VID
100
A
VLKO
(2)
Program/Erase Lockout Supply
Voltage
3.2
4.2
V
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| M29F002BB120K1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M29F002BB120K3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M29F002BB120K3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M29F002BB120K6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M29F002BB120K6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
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