- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄383292 > M2732A-20F6 (意法半導(dǎo)體) NMOS 32K 4K x 8 UV EPROM PDF資料下載
參數(shù)資料
| 型號(hào)： | M2732A-20F6 |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | NMOS 32K 4K x 8 UV EPROM |
| 中文描述： | NMOS管32K的4K的× 8紫外線(xiàn)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 93K |
| 代理商： | M2732A-20F6 |
Programming
When delivered, and after each erasure, all bits of
the M2732A are in the “1" state. Data is introduced
by selectively programming ”0’s" into the desired
bit locations. Although only “0’s” will be pro-
grammed, both “1’s” and “0’s” can be presented in
the data word. The only way to change a “0" to a
”1" is by ultraviolet light erasure.
The M2732A is in the programming mode when the
GV
PP
input is at 21V. A 0.1
μ
F capacitor must be
placed across GV
PP
and ground to suppress spu-
rious voltage transients which may damage the
device. The data to be programmed is applied, 8
bits in parallel, to the data output pins. The levels
required for the address and data inputs are TTL.
When the address and data are stable, a 50ms,
active low, TTL program pulse is applied to the E
input. A program pulse must be applied at each
address location to be programmed. Any location
can be programmed at any time - either individually,
sequentially, or at random. The program pulse has
a maximum width of 55ms. The M2732A must not
be programmed with a DC signal applied to the E
input.
Programming of multiple M2732As in parallel with
the same data can be easily accomplished due to
the simplicity of the programming requirements.
Inputs of the paralleled M2732As may be con-
nected together when they are programmed with
the same data. A low level TTL pulse applied to the
E input programs the paralleled 2732As.
Program Inhibit
Programming of multiple M2732As in parallel with
different data is also easily accomplished. Except
for E, all like inputs (including GV
PP
) of the parallel
M2732As may be common. A TTL level program
pulse applied to a M2732A’s E input with GV
PP
at
21V will program that M2732A. A high level E input
inhibits the other M2732As from being pro-
grammed.
Program Verify
A verify should be performed on the programmed
bits to determine that they were correctly pro-
grammed. The verify is carried out with GV
PP
and
E at V
IL
.
ERASURE
OPERATION
The erasure characteristics of the M2732A are
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that sunlight
and certain types of fluorescent lamps have wave-
lengths in the 3000-4000 range. Research shows
that constant exposure to room level fluorescent
lighting could erase a typical M2732A in approxi-
mately 3 years, while it would take approximately
1 week to cause erasure when exposed to the
direct sunlight. If the M2732A is to be exposed to
these types of lighting conditions for extended pe-
riods of time, it is suggested that opaque labels be
put over the M2732A window to prevent uninten-
tional erasure.
The recommended erasure procedure for the
M2732A is exposure to shortwave ultraviolet light
which has a wavelength of 2537 . The integrated
dose (i.e. UV intensity x exposure time) for erasure
should be a minimum of 15 W-sec/cm
2
. The era-
sure time with this dosage is approximately 15 to
20 minutes using an ultraviolet lamp with 12000
μ
W/cm
2
power rating. The M2732A should be
placed within 2.5 cm of the lamp tubes during
erasure. Some lamps have a filter on their tubes
which should be removed before erasure.
Mode
E
GV
PP
V
CC
Q0 - Q7
Read
V
IL
V
IL
V
CC
Data Out
Program
V
IL
Pulse
V
PP
V
CC
Data In
Verify
V
IL
V
IL
V
CC
Data Out
Program Inhibit
V
IH
V
PP
V
CC
Hi-Z
Standby
V
IH
X
V
CC
Hi-Z
Note:
X = V
IH
or V
IL
.
Table 3. Operating Modes
3/9
M2732A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2732A-25F1 | NMOS 32K 4K x 8 UV EPROM |
| M2732A-25F6 | NMOS 32K 4K x 8 UV EPROM |
| M2732A-2F1 | NMOS 32K 4K x 8 UV EPROM |
| M2732A-2F6 | NMOS 32K 4K x 8 UV EPROM |
| M2732A-3F1 | NMOS 32K 4K x 8 UV EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2732A-25F1 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:NMOS 32K 4K x 8 UV EPROM |
| M2732A-25F6 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:NMOS 32K 4K x 8 UV EPROM |
| M2732A2F1 | 制造商:ST MICRO 功能描述:NEW |
| M2732A-2F1 | 功能描述:可擦除可編程ROM DISC BY STM 5/01 DIP-24 4KX8 200NS RoHS:否 制造商:Maxim Integrated 類(lèi)型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類(lèi)型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M2732A-2F6 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:NMOS 32K 4K x 8 UV EPROM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。