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參數(shù)資料
| 型號： | LTE-2871 |
| 廠商： | LITE-ON ELECTRONICS INC |
| 元件分類： | 紅外LED |
| 英文描述： | GaAlAs T-1 3/4 Modified Infrared Emitting Diode |
| 中文描述： | 5 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 273K |
| 代理商： | LTE-2871 |
10-12
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
GaAlAs T-1
3
/
4
Modified 5
Infrared Emitting Diode
LTE-2871/LTE-2871C
Features
Selected to specific on-line intensity and radiant inten-
sity ranges.
Low cost plastic end looking package.
T-1
3
/
4
modified package.
The LTE-2871 series are made with Gallium Aluminum
Arsenide window layer on Gallium Arsenide infrared
emitting diodes.
Description
The LTE-2871 series are high intensity Gallium Aluminum
Arsenide infrared emitting diodes mounted in clear plas-
tic end looking packages. The LTE-2871 series provides
a broad range of intensity selection. Suffix C-smoke
color lens.
Parameter
Power Dissipation
Peak Forward Current(300pps, 10
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
s pulse)
260
for 5 Seconds
Parameter
Test
Condition
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
V
R
=5V
*Aperture Radiant Incidence
Radiant Intensity
Peak Emission Wavelength
Spectral Line Half-Width
Forward Voltage
Reverse Current
View Angle (See Fig. 6)
Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm
2
in perpendicular to and
centered on the mechanical axis of the lens and 26.8mm from lens.
Ee
Ie
Peak
V
F
I
R
2
1
/
2
0.7
5.25
1.6
12
940
50
1.2
16
1.6
100
mW/cm
2
mW/sr
nm
nm
V
A
deg
90
1
60
5
mW
A
mA
V
-40
-55
to +85
to +100
Absolute Maximum Ratings at Ta=25
Maximum Rating
Unit
Symbol
Min.
Typ.
Max.
Unit
Electrical Optical Characteristics at Ta=25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTE-302 | SELECTED TO SPECIFIC ON-LIVE INTENSITY AND RADIANT INTENSITY RANGES |
| LTE-3271T | GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode |
| LTE-3271TL | GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode |
| LTE-4206 | SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES |
| LTE-5208A | MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR - 3208 SERIES IF PHOTOTRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTE2871C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| LTE-2871C | 功能描述:紅外發(fā)射源 Emitter Smoke 940nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| LTE-2872U | 功能描述:紅外發(fā)射源 Emitter Clear 940nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| LTE301 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| LTE302 | 制造商:Lite-On Semiconductor Corporation 功能描述: |
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