- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377779 > LTC4440EMS8E (LINEAR TECHNOLOGY CORP) High Speed, High Voltage High Side Gate Driver PDF資料下載
參數(shù)資料
| 型號(hào)： | LTC4440EMS8E |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Speed, High Voltage High Side Gate Driver |
| 中文描述： | 2.4 A BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, MSOP-8 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 236K |
| 代理商： | LTC4440EMS8E |
9
LTC4440
4440i
Bypassing and Grounding
The LTC4440 requires proper bypassing on the V
CC
and
V
BOOST–TS
supplies due to its high speed switching (nano-
seconds) and large AC currents (Amperes). Careless
component placement and PCB trace routing may cause
excessive ringing and under/overshoot.
To obtain the optimum performance from the LTC4440:
A. Mount the bypass capacitors as close as possible
between the V
CC
and GND pins and the BOOST and TS
pins. The leads should be shortened as much as pos-
sible to reduce lead inductance.
B. Use a low inductance, low impedance ground plane to
reduce any ground drop and stray capacitance. Re-
member that the LTC4440 switches >2A peak currents
and any significant ground drop will degrade signal
integrity.
APPLICATIOU
W
U
U
C. Plan the power/ground routing carefully. Know where
the large load switching current is coming from and
going to. Maintain separate ground return paths for the
input pin and the output power stage.
D.Keep the copper trace between the driver output pin and
the load short and wide.
E. When using the MS8E package, be sure to solder the
exposed pad on the back side of the LTC4440 package
to the board. Correctly soldered to a 2500mm
2
double-
sided 1oz copper board, the LTC4440 has a thermal
resistance of approximately 40
°
C/W. Failure to make
good thermal contact between the exposed back side
and the copper board will result in thermal resistances
far greater than 40
°
C/W.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC4440 | High Speed, High Voltage High Side Gate Driver |
| LTC4440ES6 | High Speed, High Voltage High Side Gate Driver |
| LTC4441 | N-Channel MOSFET Gate Driver |
| LTC4441ES8-1 | N-Channel MOSFET Gate Driver |
| LTC4441IS8-1 | N-Channel MOSFET Gate Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC4440EMS8E#PBF | 功能描述:IC HIGH-SIDE DRIVER HS HV 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:- 其它有關(guān)文件:VND5E050AK-E View All Specifications 產(chǎn)品培訓(xùn)模塊:VIPower™ M0-5 Smart Power Devices 標(biāo)準(zhǔn)包裝:1,000 系列:VIPower™ 類型:高端 輸入類型:非反相 輸出數(shù):2 導(dǎo)通狀態(tài)電阻:50 毫歐 電流 - 輸出 / 通道:19A 電流 - 峰值輸出:27A 電源電壓:4.5 V ~ 28 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:24-SOP（0.295"，7.50mm 寬）裸露焊盤 供應(yīng)商設(shè)備封裝:PowerSSO-24 包裝:帶卷 (TR) 其它名稱:497-11699-2VND5E050AKTR-E-ND |
| LTC4440EMS8E#TR | 功能描述:IC DRIVER HIGH SIDE HS/HV 8MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:高端 輸入類型:非反相 輸出數(shù):1 導(dǎo)通狀態(tài)電阻:85 毫歐 電流 - 輸出 / 通道:2A 電流 - 峰值輸出:6A 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:4-UFDFN 裸露焊盤，4-TMLF? 供應(yīng)商設(shè)備封裝:4-TMLF?（1.2x1.6） 包裝:剪切帶 (CT) 其它名稱:576-1574-1 |
| LTC4440EMS8E#TRPBF | 功能描述:IC HIGH-SIDE DVR HS HV 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:高端 輸入類型:非反相 輸出數(shù):1 導(dǎo)通狀態(tài)電阻:85 毫歐 電流 - 輸出 / 通道:2A 電流 - 峰值輸出:6A 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:4-UFDFN 裸露焊盤，4-TMLF? 供應(yīng)商設(shè)備封裝:4-TMLF?（1.2x1.6） 包裝:剪切帶 (CT) 其它名稱:576-1574-1 |
| LTC4440EMS8E-5 | 制造商:Linear Technology 功能描述:MOSFET DRVR 1.1A 1-OUT Hi Side Full Brdg/Half Brdg Non-Inv 8-Pin MSOP EP |
| LTC4440EMS8E-5#PBF | 功能描述:IC HIGH-SIDE DVR HS HV 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:高端 輸入類型:非反相 輸出數(shù):1 導(dǎo)通狀態(tài)電阻:85 毫歐 電流 - 輸出 / 通道:2A 電流 - 峰值輸出:6A 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:4-UFDFN 裸露焊盤，4-TMLF? 供應(yīng)商設(shè)備封裝:4-TMLF?（1.2x1.6） 包裝:剪切帶 (CT) 其它名稱:576-1574-1 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。