參數(shù)資料
型號: LSP3122T50AE
廠商: LITE-ON SEMICONDUCTOR CORP
元件分類: 穩(wěn)壓器
英文描述: 6.9 A SWITCHING REGULATOR, 173 kHz SWITCHING FREQ-MAX, SFM5
封裝: TO-220, 5 PIN
文件頁數(shù): 3/8頁
文件大小: 392K
代理商: LSP3122T50AE
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SILICON TRANSISTOR
2SC3735
HIGH SPEED SWITCHING
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D19098EJ2V0DS00 (2nd edition)
(Previous No. TC-1647)
Date Published January 2008 NS
Printed in Japan
1985, 2008
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
High-speed switching
Low collector saturation voltage
High gain bandwidth product
Low collector capacitance
Can be used complementary to the 2SA1462.
Package: 3-pin Mini Mold (SC-59)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°C)
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCES
40
V
VCEO
15
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current
IC
200
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
ELECTRICAL CHRACTERISTICS (Ta = 25
°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0 A
0.1
μA
Emitter Cut-off Current
IEBO
VEB = 3.0 V, IC = 0 A
0.1
μA
DC Current Gain
hFE
VCE = 1.0 V, IC = 10 mA
40
90
200
Collector Saturation Voltage
VCE(sat)
IC = 10 mA, IB = 1.0 mA
0.15
0.25
V
Base Saturation Voltage
VBE(sat)
IC = 10 mA, IB = 1.0 mA
0.80
0.85
V
Gain Bandwidth Product
fT
VCE = 10 V, IE =
10 mA
500
750
MHz
Collector Capacitance
Cob
VCB = 5.0 V, IE = 0 A, f = 1.0 MHz
1.8
4.0
pF
Turn-on Time
ton
8.0
12
ns
Storage Time
tstg
6.0
13
ns
Turn-off Time
toff
(When tstg, IB1 =
IB2 = 10 mA)
See Test Circuits
12
18
ns
hFE Classification
Marking
B33
B34
B35
hFE
40 to 80
60 to 120
100 to 200
PACKAGE DRAWING (Unit: mm)
2.8±0.2
1.5
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
2.9±0.2
0.4
+0.1
–0.05
0.3
1.1
to
1.4
Marking
0.16
+0.1
–0.06
0
to
0.1
1
2
3
1. Emitter
2. Base
3. Collector
<R>
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