參數(shù)資料
型號： LPC1343FHN33,518
廠商： NXP Semiconductors
文件頁數(shù)： 25/74頁
文件大?。?/td> 0K
描述： IC MCU 32BIT 32KB FLASH 32HVQFN
應(yīng)用說明： LPC111x,13xx Appl Note
標(biāo)準(zhǔn)包裝： 4,000
系列： LPC13xx
核心處理器： ARM? Cortex?-M3
芯體尺寸： 32-位
速度： 72MHz
連通性： I²C，Microwire，SPI，SSI，SSP，UART/USART，USB
外圍設(shè)備： 欠壓檢測/復(fù)位，POR，WDT
輸入/輸出數(shù)： 28
程序存儲器容量： 32KB（32K x 8）
程序存儲器類型： 閃存
RAM 容量： 8K x 8
電壓 - 電源 (Vcc/Vdd)： 2 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 32-VQFN 裸露焊盤
包裝： 帶卷 (TR)
其它名稱： LPC1343FHN33518
LPC1311_13_42_43
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 6 June 2012
31 of 74
NXP Semiconductors
LPC1311/13/42/43
32-bit ARM Cortex-M3 microcontroller
8.
Limiting values
[1]
The following applies to the limiting values:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated
maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless
otherwise noted.
[2]
Including voltage on outputs in 3-state mode.
[3]
The maximum non-operating storage temperature is different than the temperature for required shelf life which should be determined
based on required shelf lifetime. Please refer to the JEDEC specification J-STD-033B.1 for further details.
[4]
Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
Ω series resistor.
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).[1]
Symbol
Parameter
Conditions
Min
Max
Unit
VDD
supply voltage (core and
external rail)
2.0
3.6
V
VI
input voltage
5 V tolerant I/O pins; only valid
when the VDD supply voltage is
present
0.5
+5.5
V
IDD
supply current
per supply pin
-
100
mA
ISS
ground current
per ground pin
-
100
mA
Ilatch
I/O latch-up current
(0.5VDD) < VI < (1.5VDD);
Tj < 125
°C
-100
mA
Tstg
storage temperature
non-operating
65
+150
°C
Tj(max)
maximum junction temperature
-
150
°C
Ptot(pack)
total power dissipation (per
package)
based on package heat transfer, not
device power consumption
-1.5
W
VESD
electrostatic discharge voltage
human body model; all pins
6500
+6500
V
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