參數(shù)資料
型號(hào): LM733
廠商: National Semiconductor Corporation
英文描述: CAP 63V 33UF ELECT AXIAL
中文描述: LM733/LM733C差分放大器
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 169K
代理商: LM733
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Diffential Input Voltage
g
5V
g
6V
g
8V
10 mA
Common Mode Input Voltage
V
CC
Output Current
Power Dissipation (Note 1)
500 mW
a
150
§
C
Junction Temperature
Storage Temperature Range
b
65
§
C to
a
150
§
C
Operating Temperature Range
LM733
LM733C
b
55
§
C to
a
125
§
C
0
§
C to
a
70
§
C
Lead Temperature (Soldering, 10 sec.)
260
§
C
Electrical Characteristics
(T
A
e
25
§
C, unless otherwise specified, see test circuits, V
S
e
g
6.0V)
Characteristics
Test
Circuit
Test Conditions
LM733
LM733C
Units
Min
Typ
Max
Min
Typ
Max
Differential Voltage Gain
Gain 1 (Note 2)
Gain 2 (Note 3)
Gain 3 (Note 4)
300
90
9.0
400
100
10
500
110
11
250
80
8.0
400
100
10
600
120
12
1
R
L
e
2 k
X
V
OUT
e
3 Vp-p
Bandwidth
Gain 1
Gain 2
Gain 3
40
90
120
40
90
120
MHz
MHz
MHz
2
Rise Time
Gain 1
Gain 2
Gain 3
V
OUT
e
1 Vp-p
10.5
4.5
2.5
10.5
4.5
2.5
ns
ns
ns
2
10
12
Propagation Delay
Gain 1
Gain 2
Gain 3
V
OUT
e
1 Vp-p
7.5
6.0
3.6
7.5
6.0
3.6
ns
ns
ns
2
10
10
Input Resistance
Gain 1
Gain 2
Gain 3
4.0
30
250
4.0
30
250
k
X
k
X
k
X
20
10
Input Capacitance
Gain 2
2.0
2.0
pF
Input Offset Current
0.4
3.0
0.4
5.0
m
A
Input Bias Current
9.0
20
9.0
30
m
A
Input Noise Voltage
BW
e
1 kHz to 10 MHz
12
12
m
Vrms
Input Voltage Range
1
g
1.0
g
1.0
V
Common Mode Rejection Ratio
Gain 2
Gain 2
1
V
CM
e
g
1V f
s
100 kHz
V
CM
e
g
1V f
e
5 MHz
60
86
60
60
86
60
dB
dB
Supply Voltage Rejection Ratio
Gain 2
1
D
V
S
e
g
0.5V
50
70
50
70
dB
Output Offset Voltage
Gain 1
Gain 2 and 3
1
R
L
e
%
0.6
0.35
1.5
1.0
0.6
0.35
1.5
1.5
V
V
Output Common Mode Voltage
1
R
L
e
%
2.4
2.9
3.4
2.4
2.9
3.4
V
Output Voltage Swing
1
R
L
e
2k
3.0
4.0
3.0
4.0
Output Sink Current
2.5
3.6
2.5
3.6
mA
Output Resistance
20
20
X
Power Supply Current
1
R
L
e
%
18
24
18
24
mA
2
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