參數(shù)資料
型號: L8411
廠商: Hamamatsu Photonics
英文描述: HIGH POWER QUASI-CW LASER DIODE
中文描述: 大功率準連續(xù)激光二極管
文件頁數(shù): 1/2頁
文件大?。?/td> 72K
代理商: L8411
Our high power Quasi-CW laser diode, L8411, features several advantages such as high stability with long life, high
cost performance with compact structure, and higher peak intensity. It can be applied as light source to pump solid
state lasers, for material processing like welding or soldering, and for medical systems. The lasing areas consist of
small laser emitters arranged in line and are thus called “Bar” structure. A high Quasi-CW output power as high as
10kW at peak was achieved by stacking ten Bars. Cooling methods can be selected from Peltier-cooling, water-cooling
and Funryu-cooling (patent pending : Japan 8-139479, WO 00/11717). A high power laser module with a focusing lens
and a driving electronics are optionally available.
High power Quasi-CW operation
Symbol
φ
e
V
R
Tw
D
R
T
op
T
stg
Low Duty Ratio Type
105
2.0
200
1
High Duty Ratio Type
55
2.0
200
20
Unit
W
V
μ
sec
%
c
c
+15 to +35
-20 to +40
Parameter
Symbol
Low Duty Ratio Type
Conditions
High Duty Ratio Type
Conditions
Unit
Radiant Output Power / bar
Forward Current
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Array Length
Maximum Number of Stacks
*Contact sales stuff for emitting wave-length and radiant output power (
φ
e
) other than above.
φ
e
I
F
λ
p
λ
V
F
θ
//
θ
Ith
-
-
W
A
nm
nm
V
(degree)
(degree)
A
mm
stack
φ
e
=100W
φ
e
=100W
φ
e
=100W
φ
e
=100W
FWHM
Value
100
120
808
4
2.0
10
35
25
10
25
φ
e
=50W
φ
e
=50W
φ
e
=50W
φ
e
=50W
FWHM
Value
50
80
808
5
1.9
10
35
20
10
6
CHARACTERISTICS (Each bar, Ta=20
c
)
PRELIMINARY DATA
HIGH POWER QUASI-CW
LASER DIODE L8411
FEATURES
High optical power : 50 to 100W/bar in average
High stability
Long life
High cost performance
APPLICATIONS
Pumping source for solid state lasers
Materials processing
Welding
Soldering
Medical systems
ABSOLUTE MAXIMUM RATINGS (Each bar)
Parameter
Radiant Output Power / bar
Reverse Voltage
Pulse Duration
Duty Ratio
Operating Temperature
Storage Temperature
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2000 Hamamatsu Photonics K.K.
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