參數(shù)資料
型號: L6563TR
廠商: 意法半導(dǎo)體
元件分類: 基準電壓源/電流源
英文描述: ADVANCED TRANSITION-MODE PFC CONTROLLER
中文描述: 先進的轉(zhuǎn)型模式PFC控制器
文件頁數(shù): 18/25頁
文件大?。?/td> 362K
代理商: L6563TR
L6563
18/25
Figure 39. 80W, wide-range-mains PFC pre-regulator with tracking boost function active
Figure 40. Tracking boost and Voltage Feedforward blocks
4.6 Inductor saturation detection
Boost inductor's hard saturation may be a fatal event for a PFC pre-regulator: the current upslope be-
comes so large (50-100 times steeper, see
Figure 41
) that during the current sense propagation delay the
current may reach abnormally high values. The voltage drop caused by this abnormal current on the sense
resistor reduces the gate-to-source voltage, so that the MOSFET may work in the active region and dis-
sipate a huge amount of power, which leads to a catastrophic failure after few switching cycles.
A well-designed boost inductor must not saturate even under the worst-case operating conditions, that is
at power-up with maximum load and minimum line voltage, when the error amplifier saturates high and
commands the maximum peak current (defined by the current reference clamp, V
CSclamp
, and the sense
resistor) for some line cycles. However, especially in the development stage, inductor saturation may be
encountered and a protection able to prevent the application from blowing up can be very useful.
The device is provided with a second comparator on the current sense pin (CS, #4) that stops and latches
off the IC if the voltage on the pin, normally limited within 1.1V, exceeds 1.7V. Also the cascaded DC-DC
converter can be stopped via the PWM_LATCH pin that is asserted high. In this way there can be abnor-
mal current only for one cycle, after that the system is stopped and enabled to restart only after recycling
the input power, that is when the Vcc voltages of the IC and the PWM controller go below their respective
UVLO thresholds. System safety will be considerably increased.
14
3
BRIDGE
4 x 1N4007
C1
0400V
C3
22
μ
F
25V
FUSE
4A/250V
R3
68 k
T
11
12
L6563
13
2
1
C6 100 nF
R6
10
MOS
STP8NM50
4
C6
56 μF
400V
Vo=200 to 385 V
Po=80W
Vac
(88V to 264V)
R7a,b
0.68
1/4 W
R9
47.5 k
+
-
C2
2.2nF
D1
STTH1L06
NTC
R5
62 k
C5
5
C4
470 nF
6
7
10
8
9
R4
21 k
R8b
1 M
10.3 to 22V
R8a
1 M
C7
10 nF
R10b
3.3 M
R10a
3.3 M
R11
34.8 k
R1b
3.3 M
R1a
3.3 M
R2
51.1 k
R10
390 k
R1
L6563
INV
1
Vout
TBO
6
1:1 CURRENT
MIRROR
R
T
2.5V
E/A
+
-
COMP
2
3V
-
+
5
I
TBO
I
R1
MULT
3
R5
Rectified mains
R6
"ideal"
diode
MULTIPLIER
1/V
2
current
reference
R2
I
R2
I
TBO
9.5V
9.5V
VFF
C
FF
R
FF
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